Monolithic photonic integrated circuit (PIC) chip and a method tuning optical components integrated in a monolithic photonic integrated circuit (PIC)

ABSTRACT

An optical transmitter comprises a monolithic transmitter photonic integrated circuit (TxPIC) chip that includes an array of modulated sources formed on the PIC chip and having different operating wavelengths approximating a standardized wavelength grid and providing signal outputs of different wavelengths. A wavelength selective combiner is formed on the PIC chip having a wavelength grid passband response approximating the wavelength grid of the standardized wavelength grid. The signal outputs of the modulated sources optically coupled to inputs of the wavelength selective combiner to produce a combined signal output from the combiner. A first wavelength tuning element coupled to each of the modulated sources and a second wavelength tuning element coupled to the wavelength selective combiner. A wavelength monitoring unit is coupled to the wavelength selective combiner to sample the combined signal output. A wavelength control system coupled to the first and second wavelength tuning elements and to said wavelength monitoring unit to receive the sampled combined signal output. The wavelength control system adjusts the respective wavelengths of operation of the modulated sources to approximate or to be chirped to the standardized wavelength grid and for adjusting the optical combiner wavelength grid passband response to approximate the standardized wavelength grid.

REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. parent patent application,Ser. No. 10/267,330, filed Oct. 8, 2002, which application claimspriority to following provisional applications, Ser. No. 60/328,207,filed Oct. 9, 2001, now U.S. patent application, Ser. No. 10/267,331,filed Oct. 8, 2002 and entitled, TRANSMITTER PHOTONIC INTEGRATED CIRCUIT(TxPIC) CHIP ARCHITECTURES AND DRIVE SYSTEMS AND WAVELENGTHSTABILIZATION FOR TxPICs; provisional application, Ser. No. 60/328,332,filed Oct. 9, 2001, now part of U.S. patent application, Ser. No.10/267,331, supra; provisional application, Ser. No. 60/370,345, filedApr. 5, 2002, the provisional application corresponding to U.S. patentapplication, Ser. No. 10/267,330; provisional application, Ser. No.60/378,010, filed May 10, 2002, now U.S. patent application, Ser. No.10/267,346, filed Oct. 8, 2002 and entitled, TRANSMITTER PHOTONICINTEGRATED CIRCUIT (TxPIC) CHIP WITH ENHANCED POWER AND YIELD WITHOUTON-CHIP AMPLIFICATION; and provisional application, Ser. No. 60/367,595,filed Mar. 25, 2002, now U.S. patent application, Ser. No. 10/267,304,filed Oct. 8, 2002 and entitled, AN OPTICAL SIGNAL RECEIVER PHOTONICINTEGRATED CIRCUIT (RxPIC), AN ASSOCIATED OPTICAL SIGNAL TRANSMITTERPHOTONIC INTEGRATED CIRCUIT (TxPIC) AND AN OPTICAL TRANSPORT NETWORKUTILIZING THESE CIRCUITS, all of which applications are incorporatedherein by their reference in their entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates generally to wavelength stabilization ofintegrated optical components or elements integrated on semiconductorchips or integrated in monolithic photonic integrated circuits (PICs)and more particularly to the manner of monitoring and controlling ofwavelength tuning elements in or associated such chips or PICs.

Reference in this disclosure to wavelength stabilization is generally tostabilizing the lasing wavelengths of a plurality of laser sources, suchas DFB or DBR lasers, on a monolithic TxPICs having differentoperational wavelengths approximating a standardized wavelength grid,such as the ITU grid. Further, this application relates to optimizationof the laser source wavelength grid with the optical multiplexer orcombiner wavelength grid where the array of laser sources andmultiplexer are integrated on the same PIC. Also, further, thisapplication relates to creating the required output power comb versusthe wavelengths of the modulated sources. As used herein, modulatedsources may be comprised of directly modulated (DM) lasers or externallymodulated lasers, such as SMLs, e.g., EMLs.

2. Description of the Related Art

If used throughout this description and the drawings, the followingshort terms have the following meanings unless otherwise stated:

1R—Re-amplification of the information signal.

2R—Optical signal regeneration that includes signal reshaping as well assignal regeneration or re-amplification.

3R—Optical signal regeneration that includes signal retiming as well assignal reshaping as well as regeneration or re-amplification.

4R—Any electronic reconditioning to correct for transmission impairmentsother than 3R processing, such as, but not limited to, FEC encoding,decoding and re-encoding.

A/D-Add/Drop.

APD—Avalanche Photodiode.

AWG—Arrayed Waveguide Grating.

BER—Bit Error Rate.

CD—Chromatic Dispersion.

CDWM—Cascaded Dielectric wavelength Multiplexer (Demultiplexer).

CoC—Chip on Carrier.

DBR—Distributed Bragg Reflector laser.

EDFAs—Erbium Doped Fiber Amplifiers.

DAWN—Digitally Amplified Wavelength Network.

DCF—Dispersion Compensating Fiber.

DEMUX—Demultiplexer.

DFB—Distributed Feedback laser.

DLM—Digital Line Modulator.

DM—Direct Modulation.

DON—Digital Optical Network as defined and used in this application.

EA—Electro-Absorption.

EAM—Electro-Absorption Modulator.

EDFA—Erbium Doped Fiber Amplifier.

EML—Electro-absorption Modulator/Laser.

EO—Electrical to Optical signal conversion (from the electrical domaininto the optical domain).

FEC—Forward Error Correction.

GVD—Group Velocity Dispersion comprising CD and/or PMD.

ITU—International Telecommunication Union.

MMI—Multimode Interference combiner.

Modulated Sources—EMLs or SMLs, combinations of lasers and externalmodulators or DM lasers.

MPD—Monitoring Photodiode.

MZM—Mach-Zehnder Modulator.

MUX—Multiplexer.

NE—Network Element.

NF—Noise Figure: The ratio of input OSNR to output OSNR.

OADM—Optical Add Drop Multiplexer.

OE—Optical to Electrical signal conversion (from the optical domain intothe electrical domain).

OEO—Optical to Electrical to Optical signal conversion (from the opticaldomain into the electrical domain with electrical signal regenerationand then converted back into optical domain) and also sometimes referredto as SONET regenerators.

OEO-REGEN—OEO signal REGEN using opto-electronic regeneration.

OO—Optical-Optical for signal re-amplification due to attenuation. EDFAsdo this in current WDM systems.

OOO—Optical to Optical to Optical signal conversion (from the opticaldomain and remaining in the optical domain with optical signalregeneration and then forwarded in optical domain).

OOO-REGEN—OOO signal REGEN using all-optical regeneration.

OSNR—Optical Signal to Noise Ratio.

PIC—Photonic Integrated Circuit.

PIN—p-i-n semiconductor photodiode.

PMD—Polarization Mode Dispersion.

REGEN—digital optical signal regeneration, also referred to asre-mapping, is signal restoration, accomplished electronically oroptically or a combination of both, which is required due to bothoptical signal degradation or distortion primarily occurring duringoptical signal propagation caused by the nature and quality of thesignal itself or due to optical impairments incurred on the transportmedium.

Rx—Receiver, here in reference to optical channel receivers.

RxPIC—Receiver Photonic Integrated Circuit.

SDH—Synchronous Digital Hierarchy.

SDM—Space Division Multiplexing.

Signal regeneration (regenerating)—Also, rejuvenation. This may entail1R, 2R, 3R or 4R and in a broader sense signal A/D multiplexing,switching, routing, grooming, wavelength conversion as discussed, forexample, in the book entitled, “Optical Networks” by Rajiv Ramaswami andKumar N. Sivarajan, Second Edition, Morgan Kaufmann Publishers, 2002.

SMF—Single Mode Fiber.

SML—Semiconductor Modulator/Laser.

SOA—Semiconductor Optical Amplifier.

SONET—Synchronous Optical Network.

SSC—Spot Size Convert, sometimes referred to as a mode adapter.

TDM—Time Division Multiplexing.

TEC—Thermal Electric Cooler.

TRxPIC—Monolithic Transceiver Photonic Integrated Circuit.

Tx—Transmitter, here in reference to optical channel transmitters.

TxPIC—Transmitter Photonic Integrated Circuit.

VOA—Variable Optical Attenuator.

WDM—Wavelength Division Multiplexing. As used herein, WDM includes DenseWavelength Division Multiplexing (DWDM).

It is known in the art to provide a photonic integrated circuit (PIC)chip comprising a plurality of aligned semiconductor lasers lasing atdifferent wavelengths forming a wavelength grid of outputs which areoptically coupled on the chip through passive waveguides to an opticalcombiner or multiplexer, where the combined output is generallyamplified. Examples of such a PIC is disclosed in the paper of M. Boudaet al. entitled, “Compact High-Power Wavelength Selectable lasers forWDM Applications”, Conference on Optical Fiber Communication, TechnicalDigest series, Vol. 1, pp. 178-180, Mar. 7-10, 2000, Baltimore Md.,showing a ¼-shift DFB laser array optically coupled to a multi-modeinterference (MMI) optical combiner with a semiconductor opticalamplifier (SOA) to amplify the combined output. Another example is thearticle of Bardia Pezeshki et al. entitled, “12 nm Tunable WDM SourceUsing an Integrated Laser Array”, Electronic Letters, Vol. 36(9), pp.788-789, Apr. 27, 2000 also showing a ¼-shift DFB laser array opticallycoupled to a multi-mode interference (MMI) optical combiner with anoptical amplifier to amplify the combined or multiplexed output. Afurther paper is to M. G. Young et al. entitled, “A 16×1 WavelengthDivision Multiplexer with Integrated Distributed Bragg Reflector lasersand Electroabsorption Modulators”, IEEE Photonics Technology Letters,Vol. 5(8), pp. 908-910, August 1993 which disclosed an integrated PIChaving modulated sources comprising DBR lasers and electro-absorptionmodulators (EAMs) coupled to a combiner with its output provided to anAR coated PIC facet via an SOA on-chip amplifier. Other examples aredisclosed in U.S. Pat. No. 5,394,489 (modulated combiner output via anelectro-absorption modulator); U.S. Pat. No. 5,612,968 (redundant DFBlasers); U.S. Pat. No. 5,805,755 (multiple combiner outputs); and U.S.Pat. No. 5,870,512 (modulated combiner output via a Mach-Zehndermodulator).

Also, known in the art is the integration in a single monolithic opticalchip, i.e., a photonic integrated circuit (PIC), a plurality ofsemiconductor optical amplifiers (SOAs) with their optical outputscoupled via a plurality of passive waveguides to an AWG opticalmultiplexer to form a multiple wavelength laser source having multipleestablished laser cavities including these coupled optical components.See, for example, the paper of Charles H. Joyner et al., entitled,“Low-Threshold Nine-Channel Waveguide Grating Router-Based ContinuousWave Transmitter”, Journal of Lightwave Technology, Vol. 17(4), pp.647-651, April, 1999. To be noted is that there is an absence in theart, at least to the present knowledge of the inventors herein, of theteaching of an integrated laser modulated source array, such as in theform of modulated sources and wavelength selective optical multiplexer,e.g., such as an arrayed waveguide grating (AWG) or Echelle grating. Inthis disclosure, a wavelength selective multiplexer or combiner isdefined as one that has less than 1/N insertion loss wherein N is thenumber of modulated sources being multiplexed. The principal reason isthat it is difficult to fabricate, on a repeated basis, an array of DFBlasers with a wavelength grid that simultaneously matches the wavelengthgrid of the a wavelength selective combiner (e.g., an AWG). The priorart is replete with control systems to control the temperature of laserdiodes to control their temperatures, examples of which are disclosed inU.S. Pat. Nos. 5,949,562; 6,104,516; and 6,233,262 as well as in thearticle of D. Alfano entitled, “System-On-Chip Technology Adds Optionsfor Laser Driver Control”, WDM Solutions, pp. 43-48, November, 2001, aswell as the control of DFB laser arrays as seen in published U.S. patentapplication US2001/0019562A1, published Sep. 6, 2001. Also, there arecontrol systems to control the temperature of the wavelength grid of anAWG as set forth in U.S. Pat. No. 5,617,234.

Also, known in the art is a monolithic chip comprising the integrationof plurality of distributed feedback (DBR) semiconductor lasersoperating at different wavelengths with their outputs provided to anoptical multiplexer in the form of an array waveguide grating (AWG) asdisclosed in the article of S Menezo et al. entitled, “10-Wavelength200-GHz Channel Spacing Emitter Integrating DBR Lasers with a PHASAR onInP for WDM Applications”, IEEE Photonics Technology Letters, Vol.11(7), pp. 785-787, July, 1999. DBR laser sources are employed in thechip rather than DFB laser sources because they can be tuned to fit thewavelength comb of the AWG. However, these types of laser sources aremore difficult to manufacture in an array and in monolithic formcompared to DFB laser sources. But again, the integration of a DFB laserarray with an AWG optical multiplexer with matching of their respectivewavelength grids is difficult to achieve. Furthermore, none of thesereference demonstrates the combination of modulated sources, such as, amodulated laser source (either directly modulated or externallymodulated) with any type of source laser (DFB or DBR) in combinationwith a frequency selective multiplexer or combiner. Such sources areadvantages as they provide the possibility of extremely hightransmission capacities with the lowest optical loss and hence are partof the current invention.

Recently, U.S. Pat. No. 6,301,031 discloses an apparatus for wavelengthchannel tracking and alignment in an optical communication system. Thedisclosure of the '031 patent is directed to an optical combiner andfeedback detection device preferably formed on the same substrate and aplurality of transmitter lasers having outputs coupled to the opticalcombiner. Part of the multiplexed signals from the optical combiner aretapped and provided to the input of the detection system which monitorsthe channel wavelengths to determine if the any one of the operatinglaser signal wavelengths is offset from its desired wavelength in apredetermined or standardized wavelength grid. The system also monitorsa reference wavelength, λ₀, relative to the standardized wavelength gridto determine if the reference wavelength is offset from its desiredwavelength in a standardized wavelength grid. Thus, two different setsof wavelengths are to be aligned to a standardized wavelength grid.First and second feedback loops, provided from detectors at the outputsof the detection system, respectively provide for alignment of thepassband of the optical combiner, via the detected reference wavelength,λ₀, to a standardized wavelength grid and alignment of the respectivewavelengths of the transmitter lasers to a desired wavelength on astandardized wavelength grid. Feedback signals affect an operatingparameter of the laser sources and optical combiner, most notably theiroperating temperature where their operating wavelengths and passband,respectively, change due to changes in refractive index of theiras-grown materials with ambient temperature variations. Patent '031 is,further, directed to monitor the output power of the multiplexed signalsand adjustments are undertaken to the operating temperature and/orcurrent of the transmitter lasers to optimize their power output. Whilethe patent suggests that it is within the ability of those skilled inthe art to provide such a monitoring system to change the operatingtemperatures of these optical components, other than detecting power,such as null crossing, tone detection, and the use of a wavelengthselective device for the detection device, such as, wavelength routers,optical filtering device, fiber gratings or Fabry-Perot etalons, thereis no disclosure or direction given as to how such a wavelengthadjustment and feedback system may be implemented, particularly in thecase where, importantly, the multiple transmitter lasers and the opticalcoupled optical combiner are both provided on the same substrate as amonolithic photonic integrated circuit (PIC).

Lastly, patent '031 indicates that the crux of the invention is notrelated to how the optical components are secured, whether discretedevices or combined on a single substrate, as the attributes of theinvention would apply to both such cases. However, there is nodisclosure how the invention is to be accomplished in the case of fullintegration of these optical components on a single PIC chip, inparticular, what problems are encountered in such an integration andstill achieve a wavelength control system with the dual function ofmonitoring and adjusting the individual wavelengths of the transmitterwavelengths to a standardized grid as well as the passband of theoptical multiplexer to the same standardized grid.

It is an object of this invention to provide an optical transmitter forwavelength stabilization of integrated optical components or elementsintegrated on semiconductor chips or integrated in monolithic photonicintegrated circuits (PICs).

SUMMARY OF THE INVENTION

According to this invention, an optical transmitter operates an array oflaser sources as an integrated array on a single substrate or asintegrated in an optical transmitter photonic integrated circuit (TxPIC)maintaining the emission wavelengths of such integrated laser sources attheir targeted emission wavelengths or at least to more approximatetheir desired respective emission wavelengths. Wavelength changingelements may accompany the laser sources to bring about the change intheir operational or emission wavelength to be corrected to or towardthe desired or target emission wavelength. The wavelength changingelements may be comprise of temperature changing elements, current andvoltage changing elements or bandgap changing elements. Identificationtags in the form of low frequency tones may be applied relative torespective laser source outputs with a different frequency assigned toeach laser source so that each laser can be specifically identified in afeedback control for providing correction signals to the wavelengthchanging elements to correct for the emission wavelength of respectivelaser sources.

As indicated above, the optical transmitter may include a monolithictransmitter photonic integrated circuit (TxPIC) chip comprising an arrayof modulated sources formed on the PIC chip and having differentoperating wavelengths according to a standardized wavelength grid andproviding signal outputs of different wavelengths. As employed herein,modulating sources means a directly modulated laser source or a lasersource having its output modulated by an external modulator, externalthat is relative to the laser source but also integrated with the lasersources. Pluralities of wavelength tuning elements are integrated on thechip, one associated with each of the modulated sources. An opticalcombiner is formed on the PIC chip and the signal outputs of themodulated sources are optically coupled to one or more inputs of theoptical combiner and provided as a combined channel signal output fromthe combiner. The wavelength tuning elements provide for tuning theoperating wavelength of the respective modulated sources to beapproximate or to be chirped to the standardized wavelength grid. Thewavelength tuning elements are temperature changing elements, currentand voltage changing elements or bandgap changing elements.

A feature of this invention is the tuning optical components integratedon a chip or in a PIC, such as an optical transmitter photonicintegrated circuit (TxPIC), where a group of first optical componentsare each fabricated to have an operating wavelength approximating awavelength on a standardized or predetermined wavelength grid and areeach included with a local wavelength tuning component or element alsointegrated on the chip or in the PIC. Each of the first opticalcomponents is wavelength tuned through their local wavelength tuningcomponent to achieve a closer wavelength response that approximatestheir emission wavelength on the wavelength grid.

First and second wavelength tuning elements may be associated with thedrive current applied to each of the modulated sources or a thermal unitapplied to each of the modulated sources and a means for tuning thewavelength grid of the multiplexer. The current may be applied to eitherthe total unit or may be one or more separate sections of the sourcewherein the current is varied to tune the emission wavelength. In theparticular description here, examples of such tuning elements isdirected to heater elements or thermal electric coolers (TECs) in, on orapplied to the TXPIC. However, it will be understood by thoseknowledgeable of this art, that other such tuning elements can byutilized, such as the change of bias point on the laser sources as wellas the additional of various current tuning sections. Moreover, themultiplexer or combiner illustrated in the embodiments of this inventionis generally an arrayed waveguide grating (AWG), but it will beunderstood by those knowledgeable of this art, that other such combinerscan be utilized such as a power combiner, e.g., star coupler, multi-modeinterference (MMI) coupler or Echelle grating. Thus, these combiners arealternatives for use in the embodiments in this application whether freespace power combiners or wavelength selective combiners. However,wavelength selective combiners are preferred since they will providesignificantly lower insertion loss, especially for high channel counts.Low insertion loss multiplexing is very important to realize a practicalTxPIC as sufficient launch power is required to be useful in mostpractical systems. This patent discloses practical means for realizingsuch sources, that is, multiple modulated sources combined with awavelength selective multiplexer.

The optical transmitter photonic integrated circuit (TxPIC) disclosedherein include a plurality of laser signal sources, such as DFB lasersources, with outputs of different signal wavelengths approximated orchirped to a standardized wavelength grid, which sources are integratedon the same chip with corresponding electro-optic modulators, such assemiconductor electro-absorption (EA) modulators with their modulatedoutputs comprising channel signals provided as plural inputs to anintegrated optical multiplexer, preferably an arrayed waveguide grating(AWG). The AWG functions as a channel signal multiplexer having apassband set to best approximate a standardized or predeterminedwavelength grid and providing an output of the combined wavelengthdivision multiplexed signals. A wavelength control system includesmonitoring the multiplexed signal wavelengths and temperature changingelements for each of the integrated laser sources as well as the opticalmultiplexer so that adjustments can be made to the operationalwavelengths of the individual laser sources as well as shifting of thepassband of the optical multiplexer through changes in their operatingtemperatures to achieve optimization of the laser operationalwavelengths and the AWG passband response relative to the standardizedwavelength grid.

Other objects and attainments together with a fuller understanding ofthe invention will become apparent and appreciated by referring to thefollowing description and claims taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings wherein like reference symbols refer to like parts:

FIG. 1 is a schematic view of a first embodiment of this invention.

FIG. 1A is a lateral cross-sectional, schematic view of an example of anembodiment of an integrated DFB laser in the first embodiment of FIG. 1which also includes the waveguide layer for one of the signal paths tothe AWG.

FIG. 1B is a graphic view the power versus current (LI) curve for adirect modulated DFB laser.

FIG. 2 is a schematic view of a first embodiment of a particulararrangement of the optical components in the embodiment shown in FIG. 1.

FIG. 3 is a schematic view of a second embodiment of a particulararrangement of the optical components in the embodiment shown in FIG. 1.

FIG. 4A is a schematic view of a third embodiment of a particulararrangement of the optical components in the embodiment shown in FIG. 1.

FIG. 4B is a schematic view of a fourth embodiment of a particulararrangement of the optical components in the embodiment shown in FIG. 1.

FIG. 4C is a schematic view of a fifth embodiment of a particulararrangement of the optical components in the embodiment shown in FIG. 1.

FIG. 4D is a schematic view of a sixth embodiment of a particulararrangement of the optical components in the embodiment shown in FIG. 1.

FIGS. 5A and 5B are longitudinal cross-section, schematic views of aDFB, respectively, with a different heater element scheme for presettingthe DFB transmission or operational wavelength to a standardized gridwavelength.

FIG. 6 is a schematic view of a second embodiment of this invention.

FIG. 7 is a schematic view of a simplified version of the embodimentshown in FIG. 6.

FIG. 8 is a schematic view of a third embodiment of this invention.

FIG. 9 is a schematic view of a wavelength locking scheme that may beutilized in this invention.

FIG. 10 is a schematic view of a third embodiment of this invention.

FIG. 11 is flowchart of the process for adjusting the wavelengths of theDFB laser sources.

FIG. 12A is a flowchart of one embodiment of a method for testing theTxPIC by tuning the passband of the AWG MUX to the wavelength of thelaser.

FIG. 12B a flowchart of one embodiment of a method for fabricating aTxPIC with PDs and testing the TxPICs prior to cleaving from the wafer.

FIG. 13 is graphic illustration of the development of channel signalwaveforms on a TxPIC relative to one channel.

FIG. 14 is a perspective view of a monolithic, ridge waveguide TxPICutilizing two integrated modulators.

FIG. 15 is a diagrammatic side view of a first embodiment of amonolithic TxPIC with separate thermo-electric coolers (TEC)respectively for the integrated laser signal sources and the opticalmultiplexer.

FIG. 16 is a diagrammatic side view of a second embodiment of amonolithic TxPIC with separate thermo-electric coolers (TEC)respectively for the integrated laser signal sources and the opticalmultiplexer.

FIG. 17 is a diagrammatic side view of a monolithic, ridge waveguideTxPIC having a heater element fabricated directly in the TxPIC forcontrolling the temperature of the AWG.

FIG. 18 is a diagrammatic side view of a monolithic, ridge waveguideTxPIC having a heater element fabricated directly in the TxPIC forcontrolling the temperature of the laser sources.

FIG. 19 is a diagrammatic plan view of a portion of a TxPIC showing onelaser source with an associated, surface heater element spatiallyadjacent to the laser source.

FIG. 20 is a diagrammatic cross-sectional view of a portion of a TxPICshowing one laser source with an associated, buried heater element.

FIG. 21 is a diagrammatic plan view of a portion of a TxPIC showing onelaser source with an associated, surface heater element spatiallyoverlying the laser source.

FIG. 22 is a diagrammatic plan view of the contact pad arrangement for alaser source in a PIC to tune the laser source wavelength via contactlength trimming.

FIG. 23 is a diagrammatic plan view of the contact pad arrangement for alaser source in a PIC to tune the laser source wavelength via contactresistor trimming.

FIG. 24 is a diagrammatic side view of the deployment of micro TECelements, one for each laser source, for tuning the individual lasersource wavelengths.

DETAILED DESCRIPTION OF THE INVENTION

Reference is now made to FIG. I wherein there is shown an example of anembodiment of this invention comprising TxPIC chip 10 utilizingwavelength tuning elements for tuning the modulated source grid with themultiplexer grid, which are shown in FIG. 1 as thermal tuning elements.However, it should be understood that other wavelength tuning elementsare contemplated in this invention, such as modulated source tuning bymeans of changing laser current and bias to change its refractive indexand, therefore, the operating wavelength of a laser. Other wavelengthtuning elements include: adding multiple sections to the laser andvarying the current in each section (including, phase tuning, which isthe provision of a phase section in a DFB or DBR laser), vernier tuningwhere the best passband response is chosen from multiple outputs of theoptical multiplexer, the use of coolers to tune the wavelength grid orindividual elements of the PIC, including TECs which are also shown inconnection with the embodiments herein, and stress tuning such asthrough the use of bi-metals. Thus, the present invention contemplateswavelength tuning controlled by changes in temperature, voltage andcurrent, or bandgap.

In the present exemplary embodiment, the tuning system shown in FIG. 1comprises an optical transmitter photonic integrated circuit (TxPIC)chip 10. TxPIC chip 10 is constructed from Group Ill-V compound layersformed on an InP substrate, for example, formed in the InGaAsP/InP orInAlGaAs/InP regimes. The InP substrate may be semiconductive, e.g.,n-InP, or semi-insulating, e.g., InP:Fe. In either case, as known in theart, the contacting to the laser is different. The semi-insulatingsubstrate has the advantage of electrically isolating adjacent modulatedsources from each other thereby reducing crosstalk.

TxPIC chip 10 comprises a plurality of integrated array laser sourcesLD(1) . . . LD(N) which may be any temperature tunable semiconductorlaser, such as DBR lasers or DFB lasers. An example of monolithicintegration with DBR lasers is shown in the article of S. Menezo et al.,previously cited, which is incorporated herein by its reference. Here,it is preferred, however, that laser sources LD(1) . . . LD(N) are DFBlasers 12(1) . . . 12(N), fabricated employing selective area growth(SAG) to provide a plurality of different operating or peak wavelengthswherein the wavelengths fall within or approximate a predetermined orstandardized wavelength grid, for example, the ITU grid for G.692 ITU.However, the wavelength grid can be any deigned gird of wavelengths,such as with monotonic increasing or decreasing wavelength points on thegrid (symmetric) or with wavelength points on a grid that are not in anyordered wavelength on a wavelength grid such as points such randomwavelength points on a wavelength grid (asymmetric). The wavelengths ofthe laser sources may also be varied by other techniques that includemultiple regrowths (with butt-joints) as well as disordering (also knownas layer intermixing) either solely, in combination (including incombination with SAG). Also, note that the operating wavelengths may bevaried in groups, for example, only varied every M elements in a totalof N elements on a PIC chip, where 1<M<N depends on the wavelength gridspacing as well as the tuning range of each modulated source. There maybe any selected number of laser sources 12 capable within the epitaxiallimits of fabrication techniques for given chip dimensions. The numberof such laser sources, and, therefore, the number of signal channels, ona chip 10 may number in the tens of channels. For redundancy purposes,more tunable laser sources as well as accompanying modulators may beincorporated into TxPIC chip 10 than the number of signal channels sothat if one or more of the laser sources fail, the additional lasersources, normally not to be operated, can be placed in operation laterto replace the defective on-chip laser sources. Furthermore, theredundant SMLs may improve the yield of the PIC (at the expense ofincreased die size) by providing multiple chances to achieve therequisite performance, wavelength and/or tuning range. In such a case, awavelength tuning of the operational wavelength of these substitutedlaser or SML sources can be made if the operational channel or gridwavelength of the failed laser or SML source is within the tunabletemperature range of the system as well as the substituted laser or SMLsource and its associated tuning element (e.g., heaters as explainedbelow). There are several ways that redundancy may be achieved. In thefirst embodiment, redundant lasers are connected via a coupler (e.g.,y-branch coupler) into a single modulator which is then coupled into theinput channel of a multiplexer. In a second embodiment, redundant lasersplus redundant electro-optic modulators are connected via a coupler(e.g., y-branch coupler) into a single waveguide channel which is thencoupled into a multiplexer. In a third embodiment, modulators are placedin series and only the desired modulator is utilized. The formerembodiment is preferred when the main yield loss in a given channel isdue to laser yield or wherein directly modulated lasers are utilized.The latter two embodiments are preferred when both the laser andexternal modulators contribute significantly to the yield loss in agiven channel.

Reference is first made to FIG. 1A which illustrates an embodiment forthe cross-section of the compound semiconductor materials for chip 10,particularly at the position of the DFB array, and in particular, across-section of a buried heterostructure DFB laser in the array. Othercompound semiconductor layers or laser structures can be utilized orsubstituted for this structure as is known in the art. As an example,rather than buried structure, a ridge waveguide structure may beutilized as disclosed and described in U.S. patent application, Ser. No.10/267,346, and published as Pub. No. US23081878A1 on May 1, 2003,incorporated herein by its reference. Chip 10 comprises an n-doped InPsubstrate upon which is epitaxially deposited an InP buffer layer, bothillustrated at 13. An InGaAsP grating layer 15 is epitaxially depositedon the buffer layer followed by an InP grating planarizing layer 17. Theplanarizing layer 17 may be, for example, InP. Next, an active region 19is grown and is preferably comprised of a plurality of quantum well andbarrier layers. Selective area growth (SAG) is employed using adielectric (e.g., SiO₂ mask), as is known in the art, so that thethicknesses of the layers can be changed to effectively change thebandgap of the active region to thereby produce an array of DFB lasershaving different operational wavelengths and designed, as a group, to beapproximately on a standardized wavelength grid, such as the ITU grid.Note that other techniques may be used alternatively or in combinationwith each other or SAG to achieve the chirping of bandgaps across thelaser array, including multiple regrowths or disordering. After thegrowth of the active region 19, an upper cladding layer 21 is formedcomprising p-InP. At this point, the as-grown structure is etched backfollowed by a second epitaxial growth of InP:Fe, InP:O, InP:Fe:O, orundoped InAlAs or combinations thereof to form current blocking layers23 and forming a current channel through active region 19 as is known inthe art. This is followed by the growth of contact layer 25 ofp⁺-InGaAs. Appropriate metal contacts are patterned and applied tocontact layer 25 and being separated from one another with a dielectric(e.g., SiO₂) passivation layer (not shown) so as to cover only thecentral region of the current channel of the device as is known in theart.

Associated with each DFB laser 12 is a temperature changing elements14(1) . . . 14(N). Elements 14 may be comprised of a strip thin-filmheater formed on adjacent sides of the DFB laser stripe as shown in FIG.1, or the heater elements 14 may be formed as u-shaped strips as shownin FIG. 19 surrounding DFB laser 12. Heater elements 14 may be comprisedof selectively deposited Pt/Ti bilayer, Pt film, NiCr film, TaN film orother materials as known in the art and are electrically contacted bybonding pads (not shown) at their ends. Alternatively, elements 14 maybe a buried layer in the DFB structure such as schematically illustratedin FIG. 20. In FIG. 20, the DFB laser source comprises substrate 650upon which is deposited DFB laser structure 652, in a manner similar tothat explained in connection with previous embodiments. Blocking layers654, such as Fe or O doped layers, are fabricated to form a confined orburied DFB laser structure which is contacted through contact layer 655.Blocking layers may be encapsulated with a layer 656 that may becomprised of SiO₂, SiN or AlN. On this insulating layer 656 is formed apair of strip heaters 658 for DFB laser 652. Heaters 658 may be compriseof micro-strip layers of TiWN, W, Pt/Ti, Pt, TaN, NiCr, or othermaterials as is known in the art and are electrically contacted bybonding pads 660 on the surface of cover layer 664 comprised of SiO₂,SiN, AlN or BCB with vias 662 contacting strip heaters 658. Examples ofsuch thin film heaters are also disclosed in U.S. Pat. No. 5,960,014 andin the article of S. Sakano et al. entitled, “Tunable DFB Laser with aStriped Thin-Film Heater”, IEEE Photonics Technology Letters, Vol. 4(4),pp. 321-323, April, 1992, both of which are incorporated herein by theirreference. Lastly, heater elements 14 may alternately be positionedabove the laser contact stripe with the latter having an exposed contactat 12C such as illustrated.in FIG. 21. Note that alternative to heaterelements, tuning sections may be incorporated as part of the lasersource structure. For example, this may consist of a separate contactfor a phase tuning section deployed in a DFB or DBR laser.

A multi-layer stack of electrically resistive layers can be arranged todirect a flow of heat in a given or preferred direction. As anillustrative example, DFB lasers typically increase in wavelength byabout 0.1 nm/° C. and are operable at temperatures of 70° C. If a tuningrange of about 4 nm is desired, the DFB laser sources may be designed tobe operable over a 40° C. temperature range, i.e., the TxPIC may operateat a temperature of 30° C. and each DFB laser may be locally heated upto 70° C. to achieve a 4 nm tuning range and to vary the operationalwavelength of individual DFB lasers within this tunable wavelengthrange. Additionally, since DFB laser output power tends to decrease withoperating temperature, SOAs may deployed also on TxPIC 10 in order toachieve sufficient gain to provide the desired channel output power overthe entire range of operating temperatures of the DFB laser as well asequalize the powers, or provide a desired pre-emphasis of powers acrossthe array for optimal transmission. Pre-emphasis is deliberate arrangingof unequal individual optical channel powers from the TxPIC transmitterto compensate for channel-dependent unequal losses existing intransmission links.

With reference to heater elements 14(1) . . . 14(N) illustrated in FIG.1, these heater elements may also take on several different types ofgeometric configurations, some of which are illustrated in FIGS. 19-21.They can be a resistive heater strip formed along either side of a DFBlaser source, formed along both sides of each DFB laser source andconnected to the same current source, or formed as a u-shaped resistivestrip encompassing one end of the DFB laser structure at the devicesurface and electrically and thermally connecting the adjacent parallelresistive side strips together.

Reference is now made to FIGS. 5A and 5B illustrating another way ofsetting the wavelength of individual laser sources after TxPICfabrication. In FIG. 5A, a longitudinal cross section of the DFB lasersource 12 is shown which is similar that shown in FIG. 1A except thathere a longitudinal cross-section is shown in a region with contactelectrode set 90 for driving the laser source. In the case here, thereis a plurality drive current electrodes of increasing monotonic widthfor driving the laser source at a predetermined current density andresulting operational wavelength. In practice, the electrodes 90A-90F ofset 90 are each connected to a single common pad to the current sourcefor each respective laser source. FIG. 5B is the same as FIG. 5A exceptthe electrode set 92 is comprised of a plurality of electrode segments92A-92E of substantially the same size or width so that the appliedcurrent across the segments is accomplished by cutting the interconnectsfrom various electrodes to obtain a desired applied current level andpossibly location along the length of the device. In FIG. 5A, however,finer incremental steps can be achieved in wire bonding interconnect cutback by selecting different size electrodes. A top view of this approachis depicted in FIG. 22. As shown in FIG. 22, a p-contact pad arrangement700 is shown comprising a p-contact pad 702 connected via a interconnectmetal 706 to a DFB laser top, p-contact 704. Also include are segmentedcontact portions 707 of DFB laser top, p-contact 704. These segmentedcontact portions 707 are connected to DFB contact 704 and p-contact pad702, respectively, by small interconnects 708 and 710. These pad andcontact interconnects 708 and 710 can be selectively trimmed, via afocused laser beam to remove an interconnect, to reduce the length ofDFB contact 704 and the amount of pad 702-to-contact 704 interconnect tominimize heater tuning requirements as well as potentially eliminate theneed for on-chip heater elements altogether. The reduction in the amountof pad interconnects and laser contact length reduces current flow andapplied bias to help tune the laser wavelength. Of course, the sameapproach here can be used in connection with DBR lasers.

The wavelengths of the individual DFB laser sources are set by at thefactory by clipping trimming selective interconnects to the laser sourcein order to tune the emission wavelength of each respective laser toapproximate the relative grid wavelength. Then, in the field, the entirewavelength grid of the laser sources is shifted via a TEC device securedto the bottom of chip 10 at the laser sources to adjust the laser sourcewavelength grid to the desired transmission laser wavelength grid. Thiscan also be accomplished by phase tuning. In addition, local heaters14(1) . . . 14(N), disclosed and discussed in connection with FIG. 1,may be employed to adjust, on a continuing basis, the operatingwavelengths of the individual laser sources 12(1) . . . 12(N) to thetheir respective wavelengths in the desired or standardized transmissionwavelength grid. Thus, the concept here is to initially adjust thewavelengths of the individual laser sources via current density controlby selecting a desired number of contacts to be utilized from thecurrent driving source followed by continual adjustment via the lasersource heater control of FIG. I or the laser source wavelength grid viaa temperature changing element such as a TEC control source, of the typeshown for optical multiplexer 16 at 18 in FIG. 1, but as applied to thebottom surface of the PIC in the region of the DFB laser source array.Alternatively, instead of varying the average current density in the DFBby varying its effective length while keeping the current constant, thecurrent density along the stripe width may be varied. This approach isshown schematically in FIG. 23. FIG. 23 is a contact arrangement 720 isshown comprising p-contact 722 with interconnects to DFB first contactsegment 724A and second contact segment 724B. Contact segments 724A and724B are directly above the laser cavity. First contact segment 724A isconnected to p-contact pad 722 by a first segment resistor vernier 725and the second contact segment 724B is connected to p-contact pad 722 bya second segment resistor vernier 727. Resistor verniers 725 and 727 areselectively laser trimmed, as indicated at both 728 and 729, to removevernier resistor segment sections or portions from making conductivecontact to laser contact segments 724A and 724B. In the example shown inFIG. 23, the trimming at 728 comprises fine wavelength tuning bytrimming smaller width verniers of either resistor vernier 725 and 727,while the trimming at 729 comprises coarse wavelength tuning by trimmingwider width verniers of either resistor vernier 725 and 727. Thus, thecurrent to the lasers is adjusted by trimming the resistor networks 725and 727 which provide a total tuning range of about 2 nm, roughly 250GHz, and greatly minimizes the need for the on-chip heater elementtuning and potentially eliminates the need of such on-chip heaterelements. Of course, this contacting arrangement 720 can be applied toDBR lasers as well.

Accordingly, multiple contacts are made to the DFB sources and connectedto a contact pad 722 with various size resistors (as opposed toconductive interconnects) in verniers 725 and 727. The interconnectresistors are of varying width, with a variety of widths, as shown inFIG. 23, connecting a single contact and contact pad. The resistors arethen trimmed to vary the ratio of the currents into the differentcontacts, effectively providing a varying current density across thelength of the DFB source while maintaining a constant contact length.This embodiment may be used in conjunction with heaters and a TEC asdescribed above.

Also, included in TxPIC chip 10 is optical multiplexer 16. Opticalmultiplexer 16 may be comprised of either a multimode interference (MMI)or a star coupler of the type shown in previously mentioned U.S. Pat.Nos. 5,394,489 and 5,870,512 and the paper of M. Bouda et al., supra, oran arrayed waveguide grating (AWG) such as the structural type shown inthe previous mentioned paper of Charles. H. Joyner et al., which paperis incorporated herein by its reference as well as an Echelle grating.In principal, the AWG type or Echelle grating type of opticalmultiplexer is preferred because of their low insertion losses which arerealized as a result of the wavelength selective nature of the devices.These disadvantages of these wavelength selective multiplexers is thatthey must be substantially matched a predetermined or standardizedwavelength grid. Unfortunately, the wavelength grid of the modulatedsources and that of the multiplexers are difficult to match with thecurrent state of the art manufacturing techniques, and hence, requiretuning to enable the grids of the multiplexer and sources to be matchedor at least approximately matched. [0125] Referring again to FIG. 1, awavelength grid tuning element in the form of temperature changingelement 18 my be comprised of a Peltier element or thermo-electriccooler (TEC) is mounted beneath optical multiplexer 16 on the bottomsurface of chip 10. Temperature changing elements 14 and 18 arepositioned to locally change the operating temperature of theirrespective optical components 12 and 16. Thus, these heater elements areprovided with driving current to either increase or decrease theirtemperature.

It should be noted here that the temperature changing element 18 may beconstructed to cover over the entire bottom surface of chip 10 ratherthan just positioned beneath optical multiplexer 16. In this case,temperature changing element 18 functions as a cooler for chip 10 fromwhich the operating temperatures of DFB lasers 12 are respectivelychanged to bring and maintain their operating wavelengths to a desiredoperating wavelength within a predetermined wavelength grid, such as theITU grid. However, in the embodiment illustrated here, the operatingtemperature of the optical multiplexer is controlled separately fromthat of the DFB laser sources so that the operating temperature of thelaser sources 12 can be optimized to achieve and maintain the desiredoperating wavelength of these devices to the standardized wavelengthgrid and the operating temperature of optical multiplexer 16 can beoptimized by shifting its wavelength grid to achieve and maintain itswavelength grid as close as possible to the standardized wavelengthgrid.

When fabricating TxPIC chip 10, certain procedures are followed on arepeated basis toward duplication of the desired Group III-V layercontent, bandgap of the active region and confinement layers, positionand separation of optical components in the chip, dielectric masking toachieve desired bandgap properties through selective area growth (SAG),and so on, as are known in the art. These procedures, in turn, dependupon the concentrates and flow rates of Group III-V constituents intothe MOCVD or OMVPE reactor as well as the temperature of the reactorreaction zone at the substrate susceptor or tray, reactor pressure, andso on, as is well known in the art. Due to many different parameters andoperating procedures, it is not always possible to achieve consistencyin the designed operational wavelengths of DFB laser sources 12 or inthe grating grid (grating arm lengths) of the optical multiplexer, inthe case of an AWG filter, or the precise positioning of the input andoutput of wavelengths to the slab, space region or star coupler of anoptical multiplexer, such as, a MMI coupler or an AWG filter. Also,these optical components age over time so that their initially designedwavelength or grid parameters may change due to aging, changing theirpeak operating wavelength or peak transmission response. This may occurdue to a variety of issues, including variation in the stress of thechip which is typically mounted on a submount, e.g., AlN, via hard,e.g., AuSn, solder. Through the deployment of this invention, theoperating wavelengths of the DFB lasers and the transmission grid of theoptical multiplexer may be maintained through the wavelength controlsystem disclosed in FIG. I so that the multiplexed wavelengths providedat the output of chip 10 are operating and maintained within thestandardized wavelength grid.

DFB laser sources 12(1) . . . 12(N) are optionally coupled to inputs ofoptical multiplexer 16 via passive waveguides 20(1) . . . 20(N) formedin TxPIC chip 10. Optical multiplexer 16 includes at least one output 22for output of multiplexed channel signals λ₁ . . . λ_(N), and isoptically coupled to optical fiber 23 that includes optical boosteramplifier 24 for amplifying the signals prior to their travel on fiber25 to a fiber link such as a point-to-point optical transmission system.Amplifier 24 is a booster amplifier coupled directly to TxPIC 10 and maybe comprised of a rare earth fiber amplifier such as an erbium dopedfiber amplifier (EDFA).

Also, coupled to the multiplexed signal output fiber 23 is an opticalcoupler 26 that functions as a I% tap, for example, where the tappedmultiplexed channel signals are coupled to optical spectrum monitor 28.Monitor 28 may detect the power levels of the multiplexed signals and/orexamine the wavelength spectrum of the signals and their spectralcharacteristics. The optical spectrum monitor function may take manyforms. For example, wavelength detection can be accomplished by the useof fiber grating filters or a Fabry-Perot etalon filter with thedeployment of pilot tones for each DFB laser source 12 such as disclosedin U. S. provisional application of Robert B. Taylor et al., Ser. No.60/328,332, entitled, “Apparatus and Method of Wavelength Locking in anOptical Transmitter System”, and assigned to the assignee herein, whichprovisional application is incorporated herein by its reference. Asimilar technique is also disclosed in the paper of K. J. Park et al.entitled, “A Multi-Wavelength Locker for WDM System”, Conference onOptical Fiber Communication (OFC 2000), Technical Digest Series, pp.WE4-1 to WE4-4, Mar. 8, 2000. See also, another article of K. J. Park etal. entitled, “Simple Monitoring Technique for WDM Networks”, ElectronicLetters, Vol. 35(5), pp. 415-417, Mar. 4, 1999. Also, see U.S. Pat. No.6,233,262. These three references are incorporated herein by theirreference.

The signal information from monitor 28 is provided as an input towavelength control system 30 which comprises a controller microprocessorand associated memory 32 for receiving, monitoring and determining fromeach of the detected signal wavelengths variations from a reference ornominal and desired wavelength stored in memory 32. In the case here,temperature monitoring wavelength tuning is accomplished by changing thetemperature of optical components. In particular, wavelength controlsystem 30 provides two different temperature control signals,respectively, to temperature changing elements 14 of DFB laser sources12 (signals T_(L1), T_(L2) . . . T_(LN)) and to temperature changingelement 18 (T_(C)) of optical multiplexer 16 to, respectively, controlthe wavelengths of operation of DFB laser sources 12 through temperaturecontrol signals, T_(LN), provided from wavelength control system 30 toelements 18, and to provide a temperature control signal, T_(C), fromwavelength control system 30 to element 18 via associated controlcircuitry, which is explained below. The temperature of heater element18 is monitored and adjusted whereas the temperature of elements 14 areonly adjusted according to information processed from monitor 28.Wavelength control system 30 monitors the wavelengths in the output asreceived, via monitor 28, and determines, via stored data, as to thedesired operating wavelengths to a standardized wavelength grid. Alookup table is utilized in memory 32 as to temperature changes relatedto DFB operational wavelengths, which values are compared to the currentoperational wavelengths to provide signals, T_(LN), to temperaturechanging elements 14, via digital-to-analog converters 32(1) . . . 32(N)to heater current drivers 34(1) . . . 34(N) to provide current signalsto the respective heater elements 14 of DFB laser resources 12(1) . . .12(N) correcting for changes in laser operating wavelengths from desiredwavelengths in the standardized grid. Also, wavelength monitoring system30 provides the plurality of current control signals, I_(C), along lines51 to laser source drivers 54 via digital-to-analog converters 56 tooperate sources 12 at a designated bias voltage predetermined during theinitial testing phase at the factory. Thus, drivers 52 receive signaldata at 50 and directly modulate laser sources 12 relative to apredetermined and adjustable bias point about which the swing of themodulated signal is accomplished, as will be explained in greater detaillater.

With appropriate corrections to change the operating temperatures of therespective laser sources 12 to cause their operational wavelengths toshift their desired operational peak wavelengths, the laser sourcewavelength grid, as a whole, is optimized with the fabricated wavelengthpassband of the optical multiplexer, such as in the case of an AWG 16.Also, while the diffracted wavelengths in the resulting passband of theoptical multiplexer 16 may not be exactly those of the standardizedwavelength grid, the grid as a whole can be varied a little withtemperature to achieve the best AWG grid match to the operatingwavelength grid of DFB laser sources 12(1) . . . 12(N).

The control of the temperature for the temperature changing element 18is shown in FIG. 1. Elements 18 is preferably a thermoelectric cooler(TEC). Its temperature is controlled through monitoring of the ambienttemperature of optical multiplexer via thermistor 36. A bias ismaintained on thermistor 36, via thermistor bias circuit 38, which has aset or adjustable bias at 40 provided to circuit 38. The temperature ofTEC 18 is adjusted and maintained via TEC current driver 48. The inputto driver 48 is control amplifier 44 which includes a comparator thatreceives the current multiplexer 16 temperature, T_(ACT), forcomparison, from thermistor 36 via actual temperature circuit 46, andset temperature, T_(SET), from set temperature circuit 42 which isconnected to wavelength control system 30 and contains the presettemperature conditions for temperature operation of multiplexer 16, asinitially set, for example, at the factory and contained in memory 32.

In operation, wavelength control system 30 provides the presettemperature signal, T_(SET), from memory 32 based upon data monitoredand recorded at the factory relative to the multiplexer wavelength gridoptimized to the standardized wavelength grid. This preset temperaturecondition is provided as temperature signal, T_(C), to circuit 42 todigital-to-analog (DAC) circuit 48. Also, the ambient temperature ofmultiplexer 16 is monitored via thermistor 36 and processed at monitorcircuit 46 to determine an analog value of the current temperature,T_(ACT). Control amplifier provides a comparison of T_(ACT) with T_(SET)and provides to driver circuit 48 a signal indicative of whether thetemperature of TEC 18 should be increased or decreased. Once thetemperatures of elements 14 have been adjusted to optimize theindividual operating wavelengths of DFB laser sources 12 to thestandardized wavelength grid, adjustment is made via wavelength controlsystem 30 and TEC current driver 48 to optimize the wavelength grid ofoptical multiplexer 16 to the best matched operational wavelength gridthen established with the plurality of DFB lasers 12. To be noted isthat it may be desired, at this point, to also readjust the temperatureof one or more DFB lasers 12 to be a little off their peak transmissionwavelength but within an acceptable tolerance range, such as, within±10% of the channel spacing, in order to better optimize the matching ofthe wavelength grid of DFB lasers 12 to the wavelength grid of opticalmultiplexer 16. Thus, it is contemplated by this invention to providefor not only adjustments to the DFB laser wavelength grid with thewavelength grid of multiplexer 16 but also to fine tune the individualwavelengths of DFB lasers 12 within acceptable tolerances to match theset fabricated filtering output wavelengths of the multiplexer 16providing a set wavelength grid which can be wavelength adjusted throughwavelength shifting of the optical multiplexer wavelength grid.

In the embodiment of FIG. 1, DFB lasers sources 12(1) . . . 12(N) aredirectly modulated with the data or intelligence signals from signalsources via inputs 50. In this approach, the output light intensity ofDFB lasers 12 is modulated by modulating the current injected into thelasers via current driver circuits 52 via drive lines 54. While directmodulation of DFB lasers brings about a certain amount of wavelengthchirping, which is a function of current, the amount of chirping can bemade small by providing DFB laser sources 12 with narrow opticalspectral line width via fabrication of their bandgap and grating, suchas, through the careful control techniques using selective area growth(SAG) and grating masks in MOCVD fabrication as is known in the art orother techniques of multiple regrowths or disordering as describedpreviously.

Reference is now made to FIG. 1B which is for the purpose of explainingthe direct modulation of the array DFB laser 12(1) . . . 12(N). FIG. 1Bshows the intensity in terms of power versus current for lasermodulation. DFB lasers, in general, are limited by the maximum currentdensity that they can be driven at, which is indicated at 27 in FIG. 1B.The modulation along the current curve is designated as ΔI_(SWING) at 35and is modulation between some maximum value, I_(BIAS-MAX) at 29, andsome minimum value, I_(BIAS-MIN) at 31 where the latter is above thelasing threshold of the laser. The two points 29 (I_(SWING-MAX)) and 33(I_(BIAS-MIN)) also establish the extinction ratio of modulation. Thecentral region of ΔI_(SWING) is I_(BIAS-NOMINAL) at 35. I_(BIAS-NOMINAL)between I_(BIAS-MAX) and I_(BIAS-MIN) dictates the minimum performanceto achieve a good extinction ratio. I_(TUNE), which is the mean currentapplied to the DFB laser source, will be governed by the placement ofI_(BIAS-MAX) and I_(BIAS-MIN) which, when moved along the power curve,can be deployed to tune the wavelength of the laser by current changeswhile ΔI_(SWING) is the modulation range defining the extinction ratio.In reality, I_(TUNE) is, in its simplest form, the average current driveto the laser, i.e., I_(BIAS-MAX) and I_(BIAS-MIN) divided by two. Soroughly, the average current is I_(TUNE), which is change by I_(SWING),and the modulation of the laser is going to be faster than the thermaltime constant of the laser and, thus, not affected by a string of eitherbinary 1's or 0's. So, there is a minimum bias at which to achieve theproper extinction ratio and a maximum bias based upon the reliability ofthe laser.

Thus, there are two cases here of tuning control to achieve properwavelength and extinction ratio. These approaches are both illustratedin the diagram of FIG. 11. The first approach is the deployment ofheaters 14(1) . . . 14(N) in FIG. 1 for tuning the individual laserwavelengths to be adjusted to the standardized wavelength grid.Wavelength tuning as accomplished by heaters 14 may be sufficient foraccurate control of the individual wavelengths of the DFB lasers 12.Thus, the portion of the control scheme of FIG. 11 that is marked“OPTIONAL” may not be necessary.

The second approach is the deployment of heaters 14(1) . . . 14(N) as acoarse tuning of the laser wavelength and the current tuning of theindividual lasers as a fine tuning of the laser wavelength. As shown bythe diagram in FIG. 11, under the control of wavelength control system30 and electrically connected modulator current drivers 52 via lines 51and electrically connected laser heaters 14 via lines 53(1) . . . 53(N),a dual feedback loop is created from wavelength tuning DFB lasers 12through operating temperature changes provided by both heaters 14 andcurrent changes to the current bias of the drivers. As shown in FIG. 11,the monitored wavelengths via optical spectrum monitor 28 are comparedat 37 to the designated laser source operating wavelengths as stored inmemory 32. If the wavelength comparison is not a match at 39, then adetermination is made if there is a significant error, indicated at 41,i.e., whether there is a sufficient deviation from the desired gridwavelength to require a change in the operational or emission wavelengthoperation of the laser source. If no, then no correction is made, asindicated in FIG. 11. If yes, then a determination is made at 43 as towhether there is a large change in the laser operational wavelength,which is defined as a coarse error of one being out of the permittedband for wavelength operation of the laser relative to the standard girdwavelength, or even possibly within the operational wavelength of anadjacent laser. In most cases, a change in the heater bias, which can bedesignated as a coarse correction routine, is sufficient to correct thewavelength by increasing or decreasing the bias to the laser heater asindicated at 45, where the tuning is accomplished via system 30, aspreviously explained. However, fine tuning of the wavelength in someapplications can be accomplished by the change of the current bias tothe individual laser as well as an adjustment to its I_(SWING). Thus, atdecision making 43, if the error in operational wavelength is not large,a fine error determination can be made, as indicated at 47, and a finecorrection routine is followed where the current of the DFB is tuned viaa change in IBIAS, up in amount to increase the wavelength a smallamount and down in amount to decrease the wavelength a small amount,which function is indicated at 49. Also, as indicated at 55, I_(SWING)is adjusted so that a good extinction ratio is maintained in modulationof the DFB laser relative to changes made to I_(BIAS) (I_(TUNE)). Notethat a similar scheme may be employed for externally modulated sources,wherein the coarse tuning occurs via heaters or phase tuning of thelaser and fine tuning occurs by the average current in the laser source.

Referring again to FIG. 1, as another embodiment, wavelength controlsystem 30 may provide, in addition to temperature control signals,current control signals via lines 51 to DAC circuits 56 which areconnected to current drivers 52. Thus, the response time of changes tooperating wavelengths of the individual DFB laser sources 12 can beenhanced by providing an increase in current operation of a laser sourceto shift its output to a longer wavelength of operation toward, forexample, its desired operating wavelength while a temperature change toincrease the operating temperature of the same laser is applied via asignal T_(L). Then, system 30 provides a gradual decrease in the drivecurrent of driver circuit 52 simultaneously with an increase in theoperating temperature of the same laser source. In this manner, a fasterresponse in setting changes to the laser source operating wavelength canbe successfully achieved. A similar control system to the foregoing isdisclosed in U.S. Pat. No. 6,104,516, which patent is incorporatedherein by reference. Again, this technique can be applied to themodulated sources, i.e., to both directly modulated sources andexternally modulated sources.

One preferred combination of optical components for incorporation intoTxPIC chip 10 is shown in FIGS. 2 and 3 comprising chips 10A and 10B,respectively, an InGaAsP/InP based regime. In FIG. 2, the TxPIC chip 10Aincludes integrated semiconductor optical amplifiers (SOAs) whereas inFIG. 3, the basic TxPIC chip 10B provides minimal components for aneight channel transmitter comprising a plurality of DFB laser sources12(1) . . . 12(8); a plurality of temperature changing elements 14(1) .. . 14(8); an optical multiplexer 16 comprising, preferably, an AWG orother low-loss wavelength selective multiplexer, and a TEC unit 18 thatcovers the entire bottom surface of chip 10B. In both embodiments, thepreferred optical multiplexer (MUX) is an arrayed waveguide grating(AWG) which is a wavelength dispersive grating device, which is alsoreferred to in the art as a PHASER capable of performing MUX/DEMIUXoperations. These devices basically comprise two optical diffractiveregions commonly referred to as slabs, free space regions or starcouplers, between which are a plurality of waveguide grating arms havingpredetermined differences in their arm lengths so as to function as anarrayed waveguide grating.

It should be noted that in employing an embodiment such as shown in FIG.3 where a TEC 18 is utilized in combination with individual heaters 14for DFB laser sources 12, it is preferred that the TEC 18 be operated asa cooler rather than as a heater so that the junction temperature of theactive sources on the TxPIC chip may be ultimately lower than comparedto the case where the chip TEC 18, that thermally includes DFB lasersources 12, is utilized as a heater to tune the AWG wavelength grid.

In FIG. 2, TxPIC chip 10A comprises, in monolithic form, a plurality ofdirect modulated DFB laser sources 12(1) . . . 12(N) providing a set ofoutput wavelengths λ₁ . . . λ_(N), respectively, placed on passivewaveguides 57 coupling modulated signals to AWG 16 to its input slab orstar coupler 60 via integrated semiconductor optical amplifiers (SOAs)58(1) . . . 58(N) formed in passive waveguides 57. The purpose of SOAs58 is to boost the intensity of the outputs of laser sources 12 tocompensate for insertion loss of waveguides 57 as well as to provide forlower signal modulation, i.e., lower current swing in the modulation ofcurrent drivers (not shown in FIG. 2) thereby reducing the chirp effectin their modulation resulting in lower amplitude modulation outputs fromlaser sources 12 which are amplified by SOAs 58. Also, the SOAs canprovide the ability to equalize the power across the array to accountfor varying efficiency and/or loss through the entire optical train fora give channel. Furthermore, the SOAs may be utilized to providepre-emphasis of the channel powers for optimal transmissioncharacteristics. AWG 16 is provided with a plurality of waveguide arms62(1) . . . 62(N) that filter, according to the designed wavelength gridof the device, the modulated signals to slab 63 where the modulatedsignals are diffracted to a single output 22 which may be coupled as anoutput from chip 10 directly to boaster amplifier 24 as shown in FIG. 2.On the other hand, instead of booster fiber amplifier 24, asemiconductor laser amplifier, for example, gain-clamped-SOA (GC-SOA)64, may be integrated into optical output waveguide 22 to boost themultiplexed channel signals before they are transferred off chip tocompensate, for example, for insertion loss of AWG 16. In the case here,SOA 64 may be gain-clamped (GC), i.e., it includes a designated lasingwavelength having a peak wavelength different from any of the outputwavelengths of DFB laser sources 12. Thus, feedback is created throughan established laser cavity within the amplifying medium of the SOAcausing oscillation at the designated wavelength inside the SOA cavityso that the lasing action clamps the gain of the SOA which also leads tohigh saturation input power. As a result, the gain contributed to theplural multiplexed wavelength signals remains substantially uniform inspite of dynamic changes in their intensity or in the absence, forexample, of one or more wavelength signals from the multiplexed signalfrom AWG 16. Any developed ASE or residual gain clamped sign al fromGC-SOA 64 may be filtered from the multiplexed channel signals via afilter for these wavelengths, outside the wavelength spectrum of themultiplexed channel signals by an on-chip or off-chip filter placedbetween GC-SOA 64 and fiber amplifier 24. As to on-chip filters, seeU.S. patent application, Ser. No. 10/385,574, filed Mar. 10, 2003 andpublished on Dec. 4, 2003 as patent application Pub. No.US2003/0223672A1, illustrating several such embodiments, whichapplication is incorporated herein by its reference.

As previously indicated, TxPIC 10B in FIG. 3 is a monolithic chipcomprising an array of eight DFB lasers sources 12(1) . . . 12(8) withassociated heaters 14(1) . . . 14(8) with their light outputs coupled toinput space region 60 of AWG 16 via passive waveguides 57. AWG 16includes input space region 60 and output space region 63 between whichis a plurality of waveguide arms 62(1) . . . 62(8) of differing lengths.In the case here, the entire chip 10B is, however, temperaturecontrolled by TEC 18. In this case, as previously indicated, TEC unit 18may be deployed to cool chip to a designated or predeterminedtemperature value from which temperature changing elements 14(1) . . .14(8) are individually addressed to optimize the respective operationalwavelengths of DFB laser sources 12(1) . . . 12(8) to tune theirwavelengths to a standardized wavelength grid.

Reference is now made to a series of figures, FIGS. 4A-4B, whichillustrate different architectural arrangements for integrated opticalcomponents provided on monolithic InP-based chip 10. FIG. 4A illustratesa further architectural arrangement for a TxPIC chip. The purpose ofthis embodiment is to illustrate other optical components that may beintegrated into chip 10 as also discussed in patent application, Ser.No. 10/267,331, supra, published on May 22, 2003 as Pub. No.US23095737A1, incorporated by reference. In FIG. 4A, in TxPIC chip 10C,DFB laser sources 70 are not directly modulated. Instead, these sourcesare operated cw and their light outputs are modulated in accordance withdata or intelligence signals' via optical modulators, for example,electro-absorption modulators (EAMs) 74. Alternatively, these modulatorscan be, instead Mach-Zehnder modulators. Also, chip 10C is replete withphotodetectors, shown here as PIN photodiodes 68, 72, 76 and 80 in eachoptical waveguide path between integrated electro-optical components aswell as at the back end of DFB sources 70 and at the light output of AWG82. These photodiodes are provided at various locations in chip 10C forthe purposes of performing in-line testing of the opticalcharacteristics of a preceding optical component as well as opticalcomponent monitoring during its operation. For example, thesephotodiodes are employed to monitor and adjust both the applied positivebias of DFB laser sources 70 and SOA sources 78 as well as the appliednegative bias of modulator 74.

As noted in FIG. 4A, the components that are in multiple form on thechip are designated with the identifier “(N)” which means a plurality ofthese elements or components are in separate optical paths opticallycoupling these components into a single optical component, in the casehere an optical multiplexer in the form of AWG 82. This identificationis also applicable to the chips 10E, 10D and 10F in respective FIGS. 4B,4C and 4D, as discussed below.

In particular, TxPIC 10C in FIG. 4A comprises an array of DFB lasersources 70 each optically coupled at their light output to anelectro-absorption modulator (EAM) 74 via a PIN photodiode 72.Photodiode 72 is useful in monitoring the intensity of the DFB lasersource output and can, therefore, be utilized in a feedback scheme tomaintain the desired level of laser source output power. Also, the backend of each DFB laser source 70 may include an optically coupled PINphotodiode 68. Photodiodes 68 detect a small portion of the laser poweremitted out of the back end of laser sources 70 for measuring theirpower intensity for purposes, for example, of calibrating, duringinitial testing, the laser source relative to applied current and biasas well as for monitoring power and intensity during their cw operation.Also another important function of these photodiodes is to preventunwanted reflections from the nearest cleaved facet, e. g., the rearTxPIC facet, from causing unstable change in the laser outputwavelength. By the same token, PIN photodiodes 72 may be employed tomonitor the power output of DFB laser sources 70, preferably on aperiodic basis so as not to bring about a too significant insertionloss. Also, photodiodes 72 can also be employed to attenuate the outputpower of DFB laser sources 70 via an applied negative bias.

PIN photodiodes 76 are inserted after each EAM 74 for the purpose ofcalibrating the bias, current swing, and duty cycle control of eachmodulator. They also may be utilized as the a monitor of the poweroutput of the DFB laser source via the EAM. SOAs 78 are provided toboost the power output from modulators 74. The set point and modulationswing of EAMs 74 can change with time as well as experience an insertionloss change in the modulator where the channel wavelength becomesmisaligned with the desired operational wavelength and as well as withthe transmitter laser wavelength grid. With photodiodes 76 and SOAs 78as well as photodiodes 80, the modulator performance can be directlyanalyzed, readjustment can be made to the channel power via the channelSOA 78 and the performance and gain of SOAs 78 can be monitored andadjusted, respectively. This dynamic monitoring and adjusting functioncounteracts wavelength drift and power variations relative topredetermined and desired values. In this connection, it should be notedthat the wavelength adjustments of the transmitter laser sources 70 canbe adjusted in accordance with the teachings of FIG. 1 relative to T_(L)values via wavelength control system 30 either as a preset valuerelative to the set AWG wavelength grid, or dynamic monitoring andchanges in value over time. In the case of the former approach, i.e.,the preset of the transmitter laser sources 70 to the standardizedwavelength grid, adjustments can be made for smaller wavelengthdeviations and resulting power output deviations in channel signals fromEAMs 74 by making adjustments to the gain of SOAs 78 where the modulatedpower output is detected and monitored via photodetectors 80.

It is within the scope of this invention that PINS 80 in the embodimentof FIG. 4A be initially employed to monitor the optical characteristicsof the channel signals, in particular, the power output from SOAs 78, todetermine settings for its gain after adjustments are made to DFB lasersources 70 to optimize their desired wavelength transmissions to thestandardized wavelength grid. Then, PIN photodiodes 80 can be operatedas saturable absorbers where their gain region is either unbiased orreversed biased, providing a net effect of lower absorption for theON-state of modulator 74 and a high absorption for the OFF-state inorder to enhance the modulator extinction ratio. Thus, photodiodes 80can double as a photodetector for purposes of tap-monitoring of thelaser diode power output and as a saturable absorber for enhancing theextinction ratio of modulators 74. More will be said about thisfunctionality relative to the embodiment shown in FIG. 4B. Furthermore,photodiodes 80 and SOAs 78 can be used as optical modulators by applyingtime varying bias to them. For example, one or more of photodiodes 80could be used to encode the signal channel with additional informationuseful for signal channel identification, wavelength locking, or datatransmission additional to that encoded by EAMs 74. As an illustration,one of photodiodes 80 can have its bias voltage modulated by a sine waveor square waves, unique to the particular optical channel, to label theoptical channel for use in channel identification and wavelength lockingwithout demultiplexing the optical channels. Other modulations (toneburst, spread spectrum, multitone, etc.) can be used similarly for thesepurposes. Photodiodes 80 can also be used as voltage variable opticalattenuators, useful for controlling individual optical channel powers.

It is within the scope of this invention to employ on-chipphotodetectors, such as photodetectors 72 or 76 in FIG. 4A withintegrated forward or upfront filters, e.g., a blazed grating to selecta wavelength band around the desired peak wavelength, to detect andmonitor wavelengths of the laser sources. Another approach would be thatphotodiodes 72 or 76 would be comprise an absorption filteringphotodetector having an integrated front filter to spectrally narrow theinput optical signal to the desired bandwidth of the signal desired tobe detected. See, for example, the article of T. Cory et al. entitled,“Active Wavelength Measurement System Using an InGaAs-InP Quantum-WellElectroabsorption Filtering Detector”, IEEE Photonics TechnologyLetters, Vol. 8(12), pp. 1686-1688, December, 1996, which article isincorporated herein by its reference. Also, the InGaAsP/InP orInAlGaAs/InP alloys can be employed to make such a device. The deviceworks n the principal of absorbing wavelengths near the absorption edgeof the device leaving another wavelength bandwidth monitored which isthe desired bandwidth for the laser wavelength within the standardizedwavelength grid.

Referring again to FIG. 4A, the modulated channel signals are combinedin AWG 82. AWG 82 has at least one output for the multiplexed signalsfrom PIC chip 10C. Another output may be included in the first order,second order or Nth order Brillouin zone for purposes of monitoring thepower of the multiplexed channel signal output or the wavelengths of thetransmitter laser sources or their transmission wavelength grid, whichwill be discussed in more detail in later embodiments.

Thus, it is an important feature of this invention to provide aphotodetector (such as, a PIN or APD photodiode) to analyze the opticalcharacteristics of a preceding integrated electro-optical component toanalyze and/or monitor its operation and determine what its bias shouldbe, particularly relative to other integrated electro-opticalcomponents, to achieve a predetermined wavelength, intensity, chirp,extinction ratio, etc. in the resultant signal along the plural opticalwaveguide paths to the input of the AWG. The photodiodes may be operatedonly at specific times for signal monitoring and at other times notnegatively biased to achieve their intended detection function, i.e.,remain either unbiased to be transparent and thereby ineffective inoperation and generally transparent to the transmitter channel signals.In such a state, they may, to some extent, be absorptive of the signallight without any bias so that a small bias may be applied to themduring their non-detection periods to optimize their transparency to thetransmitter channel signals in order to render them non-contributive toany insertion loss. Also, any one set of on-chip SOAs or on-chipphotodiodes in respective optical signal channels may be also beoperated as low frequency or tone modulator for tag identification ofthe respective modulated sources for purpose of system or networkidentification of a particular modulated source on a particular TxPICchip or for purposes of wavelength stabilization as set forth in FIG. 9.Thus, each modulated source is modulated with a different low frequency(e.g., in the range of about 1 KHz to 200 KHz) employed to identify eachmodulated source in the network. In either case, the low tone modulationdoes not substantially interfere with the channel signals and may befiltered out at the optical receiver or RxPIC if necessary.

Reference is now made to FIG. 4B which shows another architecturalarrangement comprising TxPIC chip 10D. The arrangement of integratedoptical components in TxPIC chip 10B substantially differs from TxPICchip 10C in that there is a saturable absorber (SA) 78 that follows eachEA modulator 74 as well as a reduction in the number of on-chipmonitoring photodetectors. The integration of saturable absorber 75after each modulator 74 provides a means to independently improve theextinction ratio of modulator 74. The extinction ratio of the modulatedsignal is an important parameter in optical communication systems.Often, tradeoffs occur in the design of the modulator to realize a highextinction ratio along with other desired parameters, such as, lowinsertion loss and desired alpha or chirp parameters of the modulator.Such a saturable absorber can also be incorporated immediately followingSOA 78 in addition to or without the inclusion of saturable absorber 75.Saturable absorber 75 can share the same active region as that formed inDFB laser sources 70 and SOAs 78, such as illustrated at active region19 in FIG. 1A or can be tuned to a different optimal wavelength by thetechniques of SAG, multiple regrowths, and/or disordering. The activeregion of the saturable absorber 75 is either unbiased or reversebiased. The absorption region in the state of reversed bias willsaturate at high input powers and the absorption will drop. The neteffect is a lower absorption condition for the ON-state of signalmodulation and a high absorption condition for the OFF-state of signalmodulation thereby increasing the extinction ratio. In this embodiment,the saturable absorber 75 can also perform the function of aphotodetector to monitor the optical properties of the light andmodulation characteristics of EA modulator 74 in cases where it is notbeing deployed as an absorber.

As described previously, further functions of EAMs 74, SOAs 78, orphotodiodes 80 include optical modulation, such as might be used toencode signal channels with additional information useful for functionssuch as signal channel identification, wavelength locking, or datatransmission additional to that encoded by EAMs 74.

Reference is now made to the embodiment of FIG. 4C comprising TxPIC chip10E. Chip 10E has the same general configuration as chip 10C except withfewer on-chip monitoring photodiodes and is provided with multiple orcascaded EA modulators fabricated in-line for each wavelength channel onchip 10E. Here, three such cascaded EAMs 74A, 74B and 74C are shown.Since the EA modulator is such a critical optical component in the TxPICarchitecture, the incorporation of more than one modulator into eachoptical signal path will significantly increase the yield of operationalTxPIC chips from each InP wafer. The chip or die can be probe tested andeach modulator 74A, 74B and 74C tested and modulated to determine theone with the highest extinction ratio and the best or optimum chirp forsubsequent wire bonding and ultimate utilization in signal modulation.The remaining modulators are slightly positively biased or not biased atall (zero potential) so that they remain transparent to the propagatingsignal light. Alternatively, one or more of EAMs 74 in each signal path,not employed directly for signal modulation, can be wire bonded toprovide either a monitoring function, such as being operated as aphotodiode or as a saturable absorber to improve the extinction ratio asdiscussed in connection with the embodiment of FIG. 4B. Lastly, two ormore EAMs 74 in each path may be operated in tandem to function as asingle signal modulator to achieve lower extinction ratio which is afunctional utilization known in the art. Alternatively, the tandemmodulators may be operated where a first of such modulators provides aconstant pulse train and the second modulator encodes the data onto thepulse train.

Reference is now made to FIG. 4D illustrating another TxPIC architecturecomprising TxPIC chip 10D which represents a “Minimal” version of amonolithic TxPIC chip comprising this invention. TxPIC chip 10Dcomprises a plurality of optical waveguide paths that each include, inoptically coupled sequential relation, a PIN photodiode 68, a DFB lasersource 70, an EA modulator 74, a monitoring PIN photodiode 76, all theoutputs of which are coupled to inputs to the first order Brillouin zoneof AWG 82. The multiplexed channel signals from AWG 82 are opticallycoupled off-chip to EDFA 24 for signal amplification prior to theirtransfer onto the optical transmission link. The size of monolithic chip10D may be, for example, 5 mm by 3.5 mm. Also, a mode adaptor orconverter (not shown) may be placed between monitoring PIN photodiodes76 to insure that the modulated channel signals entering the inputs toAWG 82 are propagating in single mode. As previously indicated,photodiodes 68 monitor the intensity of their corresponding DFB lasersources 70 and PIN photodiodes 76 monitor their corresponding EAMs 74relative to extinction ratio, chirp, intensity and peak-to-peak changesin modulation.

Reference is now made to FIGS. 6 and 7 illustrating a TxPIC package andassociated electronic control comprising transmitter system 100 of thisinvention. In particular, system 100 utilizes signal modulation viaon-chip electro-optic modulators 110(1) . . . 110(N) receiving lightfrom cw operated DFB lasers 108(1) . . . 108(N). This differs fromtransmitter system 200 in FIG. 8 and 9, to be discussed later, wherethere are no on-chip electro-optic modulators and the DFB laser sourcesare directly modulated.

As shown in FIG. 6, the transmitter PIC (TxPIC) chip 100 is an InP basedchip, as illustrated in Ser. No. 60/328,207, incorporated by reference,or as shown in FIG. 1A relative to the structure for a DFB laser source.The optical paths making up the electro-optical components or elementscomprising individual optical signal transmission paths may be InPburied heterostructures or ridge waveguide structures or a combinationof both for different elements. As depicted in FIG. 6, TxPIC chip 100 issupported on TEC element 104 and, together, contained within atransmitter hermetic package 102. The DFB laser source paths include aplurality of optically connected electro-optical components, the numberof which of such paths being, for example, N=4, 8, 10, 12, 16, 20 or 24.Each such path comprises, in optical series, a DFB monitoringphotodetector 106(1) . . . 106(N); a DFB laser source 108(1) . . .108(N) and associated heaters 111(1) . . . 111(N); an EA modulator (EAM)110(1) . . . 110(N); a photodetector 122(1) . . . 112(N); asemiconductor optical amplifier (SOA) 114(1) . . . 114(N) and aphotodetector 111(1) . . . 116(N). Photodetectors 106, 112 and 116 areshown as PIN photodiodes but can also be avalanche photodiodes (APDs).Also, the employment of SOAs 114 and associated photodiodes 116 may beeliminated from this embodiment. Also, as an alternative, a photodiodemay be integrated in the optical paths between DFB laser sources 108 andEAMs 110, as indicated in FIG. 6 and already explained relative to FIG.4A.

As shown in FIG. 6 as well as other embodiments, heaters 111(1) . . .111(N) are connected to a common ground with other active components onTxPIC chip 100. However, alternatively, these heaters 111 may beconnected to a separate ground in order to be able to measure thecurrent through the heaters separate from other current flows on chip100. In this way, the wavelength operation of the laser sources can beapproximated since changes in the current flow through the heatersapproximates changes in laser source wavelength. Therefore, thesecurrent adjustments tune the laser source wavelengths to their desireoperating wavelengths.

Photodiodes 106 are employed to monitor the output of DFB laser 108 viathe backlight emitted from the laser sources. In this manner, as is wellknown in the art, the intensity of the generated light from lasersources 108 is monitored via circuit 162 and a feedback loop is employedto control the operating current to laser sources 108. Photodetectors112 monitor the modulated outputs of EAMs 110 for determining opticalcharacteristics of the modulated signal, such as, intensity,peak-to-peak change, extinction ratio, chirp, etc. as well as the powerexiting the combined laser plus modulator. SOAs 114 are optional in thisconfiguration, particularly in the presence of an optical fiberamplifier 126 at the output of TxPIC 101. Amplifier 126 may be an erbiumdoped fiber amplifier or other such rare earth fiber amplifier. SOAs 114provide amplification of the modulated signals from EAMs 110 andcompensate for insertion loss of previous optical components.Photodetectors 116 provide for monitoring of the intensity or power ofthe amplified modulated signals from the output of SOAs 114. Thesephotodetectors 116 may be used during manufacture for testing themodulated signal quality of all channels on TxPIC 101 to insure PICquality and operation prior to their placement into hermetic sealedpackage 102. Photodetectors 116 may also be deployed during TxPICin-field operation to monitor optical characteristics and parametersdesired for each wavelength channel such as intensity of the channelsignal and extinction ratio of the modulated signal. Also, veryimportant to the utility of this invention is that photodiodes 116 maybe employed on a continuous operating basis in TxPIC 110 as voltageoptical attenuators (VOAs) or as saturable absorbers to equalize thepower of the modulated channel signals across the modulated sources aswell as utilized for low tone modulation for signal output encodingeither to tag each of the modulated sources or for sending encodedservice channel data or information from TxPIC 110 to another terminalor node on the network. This later function can be highly instrumentalin the operation of TxPIC 110 wherein an integrated transmitter PIC hasthe capability of sending both high frequency multi-GHz channel signalsas well as low frequency multi-KHz information signals into the opticaltransport network.

As described previously, photodetectors 112 can further serve as opticalmodulators or as variable optical attenuators, in addition to theirroles as monitors. Multiple of these functions can be performedsimultaneously by a single photodetector, or the functions can bedistributed among multiple photodetectors.

All of the multiple outputs of the wavelength channels fromphotodetectors 116(1) . . . 116(N) are provided as inputs to anintegrated optical combiner or multiplexer, here shown as AWG 118. AWG118 provides at an output at the first order Brillouin zone comprisingmultiplexed channel signals, λ₁ . . . λ_(N), on output waveguide 120,which may also be comprised of a mode converter to match the single modefrom AWG 118 to optical fiber 128 coupled to receive the multiplexedsignals. Optical fiber 128 includes booster EDFA amplifier 126.Additional outputs in the first Brillouin zone may be provided foroptimized combined signal output from AWG 118. One such first order zoneoutput may also be utilized as a tap for monitoring the multiplewavelength signals coming from TxPIC 101. On the other hand, suchmonitoring taps can be taken from a higher order Brillouin zone. Suchtaps are shown in FIGS. 6 and 7 at higher order Brillouin zones atoutput waveguides 121 and 123 formed in TxPIC 101 which are,respectively, coupled to photodetectors 122 and 124, such as PINphotodiodes, integrated on TxPIC chip 101. The photo detected currentsfrom photodetectors 122 and 124 are provided on a pair of output lines129 to optical spectrum monitor 130. The operational wavelengthmonitoring photodetectors 122, 124 can be employed to determine if theoperational wavelength of the DFB laser sources are off their desiredoperational wavelength as illustrated in FIG. 6A. As shown, thedetection wavelength spectrum of the photodetectors can be deployed todiscriminate if the operational wavelength is below (n+1) or above (n−1)the desired operational wavelength for a particular laser source.Monitor 130 has the same function as the optical spectrum monitor 28 inFIG. 1 for independently determining the optical characteristics of theindividual signal channels and providing information signals along line131 to controller 132. In the example here, the type of monitoringsystem chosen may be a tone monitoring system such as disclosed in thepapers of K. J. Park et al., respectively entitled, “Simple MonitoringTechnique for WDM Networks”, Electronic Letters, Vol. 35(5), pp.415-417, Mar. 4, 1999 and “A Multi-Wavelength Locker for WDM Systems”,Conference on Optical Fiber Communication (OFC 2000), pp. WE 4-1/73 toWE 4/3/75, Wednesday Mar. 8, 2000, both of which are incorporated hereinby their reference. In this system, multiple low frequency pilot tonesare provided to the DFB laser sources 108 via tone generator 156. Tonegenerator 156 provides one tone frequency to each laser source 108 whichfunctions as an identification tag for each individual laser source anddoes not interfere with signal modulation via EAMs 110 because thefrequency tones are transparent to the modulated channel signal. Tonegenerator 156 is coupled with the SOA bias control digital-to-analog(DAC) circuit 166 so that the multiple tones can be inserted into theoptical path of each channel via SOAs 114. Thus, the tones provide a lowfrequency modulation in the signal stream through the low frequencymodulation of SOAs 114 along with appropriate bias for channel signalamplification. Alternatively, the tones may be provided in the signalchannels via a photodetector, such as PIN photodiodes 112, orsuperimposed on the bias from the DFB driver digital-to-analog (DAC)circuit 154. Thus, in the case where SOAs 114 are not to be included inthe TxPIC architecture, the tones from generator 156 may be provideddirectly to photodetectors 116 which, in this case, are not providedwith any bias for monitoring operations.

In this optical spectrum monitoring system, both AWG higher orderphotodetectors 122 and 124 are employed with outputs of thesephotodetectors with the sampled multiplexed signals are provided tooptical spectrum monitor 130 which includes an etalon filter in the line129A of one photodetector and the other line 129B is provided directlyto system 130 where the signals are digitized, Fourier transformed andprocessed as disclosed in K. J. Park et al. For each pilot tone, theFourier transform of the photocurrents from photodiodes 122 and 124 willcontain a term proportional to the derivative of the etalon transmissionpeak which can be employed to provide an error signal for locking eachof the respective DFB laser sources 108 to a desired wavelength on thestandardized wavelength grid.

Other wavelength monitoring systems are within the contemplation andscope of this invention. For example, a single photodetector, such asPIN 124, may be employed for locking the output wavelengths of the DFBlaser sources 108 to the peaks of wavelength grid of AWG 118. In thiscase, a characteristic pilot tone per each DFB laser source 108 isemployed and the electrical output signal from the single photodiode 124is fed to circuitry that provides for phase sensitive detection, i.e.,one phase detector per DFB for locking the wavelength operation of eachlaser 108 to its respective transmission peak in the wavelength grid ofAWG 118. See, for example, the paper of H. Lee et al. entitled,“Multichannel Wavelength Locking Using Transmission Peaks of an AWG forMultichannel Optical Transmission Systems”, IEEE Photonics TechnologyLetters, Vol. 10(2), pp. 276-278, February, 1998 and U.S. Pat. No.6,118,562, both of which are incorporated herein by their reference.

Also, another monitoring system that can be utilized for monitor 130 isshown in FIG. 10 and is disclosed in U.S. Pat. Nos. 5,825,792 and6,005,995, which patents are incorporated herein by its reference. FIG.10 is identical to FIG. 6 so that like elements are identified with thesame numerical indicators in these figures. System 300 in FIG. 10,however, differs from system 100 in FIG. 6 in that the pair ofphotodetectors 122 and 124 are not utilized but rather a small portionof the multiplexed channel signals is tapped off fiber 128 via tap 302and the tapped signal is directed to optical spectrum monitor 330 viaoptical fiber 304 where processing in accordance with U.S. Pat. No.5,825,792 is conducted.

Monitor 330 provides differential output signal from the signal onwaveguide 304 which is provided to a pair of photodetectors employed inthe feedback loop from monitor 130 to controller 132, via line 130, toheater control circuit 158 to adjust and stabilize the wavelengthgenerated by each laser source 108 to a standardized wavelength grid. Inthe case here, as well as in all other case of such monitoring systems,this wavelength adjustment is accomplished with respect to temperaturechanges imposed upon each of the laser source 108 via its respectiveheater 111(1) . . . 111(N) or other wavelength tuning element. However,it should be understood that other laser imposed changes can beutilized, such as current and voltage changes, phase changes, and stresschanges as previously mentioned. The control signal provided forwavelength stabilization is provided in monitor 330 through theemployment of a narrow passband wavelength transmission filter via aFabry-Perot etalon in the manner illustrated in patent '792. The etalonis inclined at an angle to provide for tuning of laser sources 108 viathe multiple transmission peaks provided by the etalon so that multiplepeak points are obtained from the etalon at the wavelength spacingcharacteristic of the wavelength grid of the laser array. These peakscan be compared to the desired peaks of the standardized wavelength gridto adjust the individual operating wavelengths of laser sources 108 viaheater elements 111 and heater DAC control circuit 158.

Having explained various wavelocking schemes relative to FIGS. 6 and 10,reference is again made to FIG. 6 to describe the remaining controlcircuitry for systems 100 and 300. As shown in FIG. 6, each of the EAMs110(1) . . . 110(N) is coupled to a current circuit driver 134. Driver134 provides the RF signal for modulation of EAMs 110. EAM bias controlcircuit 152 is provided to input B of driver circuit 134. Circuit 152provides the bias point of operation for each of the modulators 110. TheEAM peak-to-peak control 160 provides for the AC modulated swing tomaximum and minimum swing points of the signal modulation and is coupledto input P of driver 134. EAM zero crossing control provides a means forchanging the zero crossing of the signal compliments of the modulatedsignal to provide a better pulse transition from the electrical to theoptical domain, which effectively changes the duty cycle of opticalmodulation. This control is employed in conjunction with bias control150, for example, to advance the zero point crossing of the modulatedsignal. Lastly, driver circuit 134 is biased via lines 135 and 137.

Also shown in FIG. 6 is the control for monitoring and adjusting thetemperature of TxPIC 101 within package 102 via TEC unit 104. Thermistor103 is attached to TxPIC chip 101 to monitor its temperature and iscoupled to current source 142 via line 141 and ground via line or groundpoint 139. Also, thermistor 103 is connected as one input to OP AMP 144.The inputs 141 and 143 of OP AMP 144 respectively receive a signalrepresentative of the current temperature of TxPIC chip 101 viathermistor 103 and the desired or predetermined temperature providedfrom the system controller via temperature control digital-to-analogconverter (DAC) circuit 140 via line 143. TEC unit 104 is coupled toreceive the output from OP AMP 144 via line 136 and is also coupled toground 139. Amplifier 144 provides an analog output representative ofthe amount of power change to be applied to TEC unit 104 for increasingor decreasing the temperature of TxPIC chip 101 in accordance withdesired temperature setting represented by the signal from circuit 140relative to the detected temperature sensed via biased thermistor 103.This type of temperature control circuitry is well known in the art.

FIG. 7 represents a bock diagram of the TxPIC chip 101 of FIG. 6 and,therefore, like elements have the same numerical identification wherethe previous description of these elements is equally applicable here.The major differences in FIG. 7, relative to FIG. 6, are two fold.First, TEC unit 104A is monitoring and controlling the temperature ofoperation of AWG 118 via controller 161. Thus, controller 161 controlsthe temperature of operation of AWG 118 via TEC unit 104A and theindividual temperatures of heaters 111(1) . . . 111(N) based uponsettings established at the factory for pre-setting both the operatingwavelengths of the individual DFB laser sources 108(1) . . . 108(N) to astandardized wavelength grid as well as optimizing and maintain thetemperature of AWG 118 so that the AWG wavelength grid best matches thewavelength grid of transmission wavelength peaks of the DFB laser array.In this case, the temperature of AWG 118 can be monitored via a firstmonitoring thermistor as well as the overall temperature of TxPIC chip101 monitored via a second monitoring thermistor. In this particularsituation, a second TEC unit (not shown) can be applied to the remainingportions of chip 101, i.e., other than AWG 118, for purposes ofcontrolling the temperature of chip 101 not to be too high, i.e.,provide for its cooling while heaters 111 are deployed to control theoperating wavelengths of the individual DFB laser sources 108 to operatewithin the standardized wavelength grid.

The second major difference is the provision of a plurality ofwavelength multiplexed signal outputs from AWG 118 which, in the examplehere, are shown as three outputs along the zero order Brillouin zonecomprising output waveguides 120A, 120B and 120C. Furthermore, theseoutputs are optionally coupled to respective photodiodes 155, 157 and159 integrally formed on TxPIC chip 101. The purpose of multiple outputs120A-120C is to provide flexibility in providing the optimum outputmultiplexed signal from AWG 118 in terms of signal intensity andpassband selectivity. During factory electro-optic circuit testing,photodetectors 155, 157 and 159 are deployed to monitor the AWG passbandof each of the outputs 120A, 120B and 120C to determine which output hasthe optimum passband for the desired standardized wavelength grid. Afterthis determination has been made, the photodetectors 155, 157 and 159may be removed from TxPIC chip 101 by cleaving the chip along the cleave(dotted) line 165 and the chosen AWG output is thereafter coupled to theoutput optical fiber 128 (FIG. 6).

It should be noted at this point that, alternatively, photodetectors155, 157 and 159 may not be cleaved from chip 101; rather, the in-linephotodetector of the selected PIC multiplexed output is merely maintaininoperative with no applied bias, or with a small amount of positivebias as may be necessary to render the in-line detector transparent tothe combined multiplexed output channel signals, while the other twomonitoring photodetectors can be deployed for wavelength monitoring inlieu of photodetectors 122 and 124 discussed in connection with theembodiment of FIGS. 6 and 10. Lastly, any one of these photodetectorscan be provided with an identifying tag, such as a low frequency tone,to identify itself in the network or to an optical receiver that is aparticular TxPIC in the system for purposes, for example, of feedback ofinformation from such a receiver as to the quality of transmittedchannels signals in order that signal quality corrections may be made atthe identified TxPIC. It should be noted that this scheme is notintended to replace similar data that may be in the OTN header forclient signals as defined in ITU-T G.709. It is intended as acommunication or service channel between transmitting and receivingmodules.

Also, another feature of TxPIC chip 101 is that, multiple photodiodes ordetectors, in addition to photodetectors 155, 156 and 157, can beprovided in an array or multiple outputs from AWG 118, which outputs areat least equal in number to the number of signal channels fabricated onTxPIC chip 101. In this manner, if all of the multiple laser sources108, electro-optic modulators 112 and SOAs 114 of TxPIC chip 101, thenthe N number of photodetectors 155, 157, 159 are merely cleaved at 165off of chip 101 after testing of the AWG wavelength grid passband, forexample. However, if any of these latter mentioned optical components,other than AWG 118, do not operate to desirable expectations andspecifications, TxPIC chip 101 can be still salvaged as an opticalreceiver PIC (RxPIC) by cleaving chip 101 along both cleave lines 163and 165. In this case, one of the selected outputs from AWG 118 nowfunctions as an input for a received multiplexed channel signals whereAWG 118 now functions as an optical signal demultiplexer rather than anoptical signal multiplexer. Multiple outputs on waveguides 118X from AWG118 to photodiodes 116(1) . . . 116(N) function as demultiplexed signalchannel waveguides to these photodetectors in the defined chip portion101CP and respectively detect channel signals for conversion to anelectrical signal as known in the art. In this particular case,additional photodetectors 122A and 124A may also be already included inthe original input side of AWG 118 at higher order Brillouin zones, asshown in FIG. 7, and employed to monitor the optical characteristics ofthe received channel signals, such as, signal intensity or power. Inthis embodiment, birefringent filters may be employed with the RxPICchip to provide for polarization insensitive detection at thephotodiodes 118X. It should be noted that an RxPIC AWG needs bepolarization insensitive while it is not necessary for a TxPIC AWG.However, for this embodiment, polarization insensitive TxPIC AWGs can befabricated to achieve complete fulfillment of this embodiment.

Reference is now made to the embodiments of FIGS. 8 and 9 where a directmodulation system 200 is disclosed for TxPIC chip 101A. In FIGS. 8 and9, like number elements and components in previously discussed FIGS. 6,7 and 10 found in FIGS. 8 and 9 function in the same manner as inprevious embodiments and, therefore, the description in thoseembodiments is equally applicable to the embodiment of FIGS. 8 and 9.Here, however, the differences are that DFB laser sources 108(1) . . .108(N) are directly modulated via driver 134 as in the case of theembodiment of FIG. 1; optical spectrum monitor 230 utilizes only onephotodetector 124 for feedback and wavelength stabilization of therespective operating wavelengths of DFB sources 108(1) . . . 108(N); anda photodetectors 109(1) . . . 109(N) are provided in the optical pathsof the signal channels from DFB laser sources 108.

With reference to optical spectrum monitor 230, reference is made to thewavelength monitoring and correction scheme illustrated in FIG. 9.Before discussion of this wavelength monitoring and correction scheme,some attributes of this embodiment will be first discussed. TxPIC chip101A is a version of TxPIC chip 101, similar to the embodiment of FIG. 3except that photodetectors 109(1) . . . 109(N) are provided between thearray of laser sources 108(1) . . . 108(N) and AWG 118 to monitor theoutput of their respective lasers. Photodetectors 109, whether theembodiment of FIG. 8 or FIG. 9, provide three different functions: DFBlaser power monitoring; variable attenuation to the output of theirrespective DFB lasers; and apply a tone on the signal for purposes ofwavelength locking relative to previously explained wavelengthembodiments utilizing pilot tones for tagging array laser outputs.Relative to the first named function, the photodetectors 109(1) . . .109(N) may be deployed for monitoring the intensity output of theirrespective DFB laser source 108 to insure it is operating at the properpower level. Relative to the second named function, the photodetectors109 can operate as attenuators through negative bias operation to renderthe outputs of the DFB lasers across the array uniform, independent ofthe individual laser bias conditions relative to each other. Relative tothe third named function, the photodetectors can each be coupled to atone generator to provide different tone tags to each laser channelsignal for purposes of wavelength locking, as previously discussed inconnection with FIG. 6 and K. J. Park et al. FM locking scheme,incorporated by reference. In order to perform these functionssimultaneously, it is within the scope of this invention to providecascaded photodetectors, such as shown in the case of additionalphotodiodes 109A(1) . . . 109A(N) in FIG. 9. Additional such photodiodescan be provided in addition to those illustrated in FIG. 9. In thiscase, for example, photodiodes 109 are utilized, under negative bias, toprovide for signal monitoring and selected channel signal attenuation toprovide, for example, for power distribution per channel where the poweracross the respective signal channels may be uniform or non-uniformdepending on requirements in the network, e.g., some channels may berequired to have more power than other channels such as due higherinsertion losses that will be experience by signals in these channels inthe network. Another example is that an intensity or gain tilt may needto be applied across the signal channels of the modulated source array.This area of selective channel power distribution is called,pre-emphasis.

Photodiodes 109A are utilized to provide a channel identification tag,from tone generator 245, which tags are in the form of a low frequencyor tone where a different frequency is superimposed on each modulatedlaser source output. This tone deployment is an alternate approach tothe deployment of tones via tone generators 240(1) . . . 240(N) directlyto the direct modulation inputs of laser sources 108(1) . . . 108(N) inFIG. 9.

While tones have been chosen to illustrate a particular form of opticalmodulation useful for channel identification and signal processing forwavelength locking, other modulation formats such as multitone, spreadspectrum, square wave, tone burst, etc. are envisioned, depending onspecific signal processing requirements. Similarly, while the variableoptical attenuator role of the photodetectors has been discussed inconnection with equalization of optical channel powers emerging from theTxPIC, more general relationships among individual optical channelpowers are envisioned. In particular, pre-emphasis, i.e., deliberatelyarranging unequal individual optical channel powers from the transmitterto compensate for channel-dependent unequal losses in transmissionlinks, is envisioned and enabled by the variable optical attenuatorfunction on individual optical channels. This may also achieved byvarying the average bias point of the laser sources to the extent thatit does not compromise the reliability or transmission characteristicsof the modulation of the modulators.

FIG. 9 is a block diagram of a “smaller version” of TxPIC chip 101 ofFIG. 8, which is connected to a signal dithering system. In theembodiment of FIG. 8A, the higher order Brillouin zone output ofintegrated photodetector 124 provides an electrical output signalproportional to a small portion of the multiplexed channel signals. Eachlaser has its driver current modulated by a dither current, a lowfrequency AC component having a modulation depth and frequency. The ACmodulation current causes a corresponding low frequency variation inlaser wavelength. Electronic frequency filters permit the response ateach dither frequency to be measured from the photodetector response.Feedback electronics provides a control loop for adjusting the dithermodulation depth and bias point. Since each laser has its own uniquedither frequency, its wavelength and power response may be identified byusing a lock-in technique to analyze the frequency response of thephotodetector at the dither frequency.

By dithering the wavelength of each laser at a low frequency ditherfrequency (e.g., in the range of about 1 KHz to about 200 KHz), thewavelength of the laser will oscillate with the low frequency dither.The modulation depth of the laser frequency shift is controlled to beappropriate for the passband and control loop electronics to form astable control loop with the desired wavelength locking. At the opticalreceiver end, the small low-frequency amplitude variations in receivedchannel signal power may be filtered out. Since the dither frequency ismany orders of magnitude smaller than the bit rate, the instantaneouslinewidth will appear fixed for even a large bit pattern (e.g., 10⁶ bitsfor the OC-192 standard).

A controller may monitor the change in power output at the ditherfrequency and employ a control loop to establish an operating point orreference point on the passband fringe or side of the peak passband ofan Fabry-Perot etalon. Thus, the passband fringe of the etalon can bedeployed to provide detection of signal intensity differences broughtabout by using different frequency tones. Thus, a pair of detectors,where one is a reference, can discern which direction, plus or minus, isan intensity change of one or all of the signal tone frequencies andthere can identify a particular modulated source output and anindication of its operating wavelength. This approach can becharacterized as intensity modulation (IM) detection whereas thepreviously approach can be characterized as frequency modulation (FM)detection.

It will be understood that the dithering can be performed on a singlelaser and the wavelength of the other lasers locked (assuming that theyhave the same wavelength response). Alternatively, more than one lasermay be dithered at a different dither frequency and independentlyadjusted to lock it to its corresponding desired wavelength. Thus, everylaser may be dithered and independently locked or just a few lasers,like two or more lasers, may be dithered and locked, and only one laseris dithered and wavelength locked at any one given time. In this lattercase, one channel may be locked, and the other channels adjusted basedon the offset in temperature/current required to lock the laser.Alternatively, the locking may be cycled sequentially among lasers. Ifthe array locking is cycled, an interpolation method may be used forsome of the channels. It should be understood that in all of theforegoing cases, while the laser is locked to the peak of the passbandresponse, it should be understood that the laser wavelength may, aswell, be locked to the edges of the passband response rather than itspeak, such as, in a manner shown in FIG. 6A.

In particular, as shown FIG. 9, DFB laser sources 108(1) . . . 108(N)are modulated by current drivers 134(1) . . . 134(N) which also includetone generators 240(1) . . . 240(N), each of a different low frequencyin the range, for example, of 1 KHz to 200 KHz for the purpose ofproviding channel identification relative to each channel wavelength aswell as means to determine wavelength deviation from the desired gridwavelength of a laser source. The output of DFB laser sources 108 aremonitored by photodiodes 109 (as previously discussed, photodiodes 109Aare optional). The individual modulated outputs of laser sources 108 arethen multiplexed via AWG 118 and provided on output 120 to EDFA 126. Aportion of the multiplexed signal output of AWG 118 is taken, via higherorder Brillouin zone detector 124, to optical spectrum monitor 230 vialine 129 where the multiplexed signal is amplified at electronicamplifier 231. The signal is then divided via splitter 232 into multiplesignals, one each for each of N channels and the respective splitsignals are provided to filters 233(1) . . . 233(N) wherein theindividual wavelengths are filtered based on their identification tagtone and the identified channel wavelengths are provided to controller132 where the amplitude and phase of the channel signals arerespectively determined and compared to the peak of the passband of eachlaser source grid wavelength from which a correction signal is derived,determinative of the amount of correction that is applicable to bringthe operating wavelength of each of the respective lasers to its peakgrid wavelength. This is accomplished by providing a change in theapplied current or bias to the respective temperature changing elements111(1) . . . 111(N) for each laser source 108(1) . . . 108(N), thelatter of which is illustrated in FIG. 9.

Reference is now made to FIG. 12A which illustrates a flow chart for theprocedure to set the wavelength grid of the AWG optical multiplexer tothe set wavelengths of the DFB laser source, resulting in a DFB arraywavelength grid for optimal matching with the AWG wavelength grid. Thisprocedure is appropriate relative to the several embodiments of TxPICsdisclosed herein. This function of setting wavelength grids is performedunder digital computer control relative to the analog measurement of theAWG multiplexer temperature and the temperature setting and control ofboth the array of DFB laser sources and the AWG optical multiplexer.This testing, adjustment and optimization procedure is done at thefactory where the optimized values are stored and saved for later use inthe field upon installation, for example of a transmitter moduleincluded on a digital line module (DLM) in an optical transport network(OTN). First, a desired wavelength is selected relative to thestandardized grid, indicated at 400, such as λ₁ for the first lasersource indicated at 402. Adjustment of the laser source wavelength at404 is made to be on the wavelength of the standard grid. If theadjustment at 408 is not achieved, the adjustment is redone again tomake sure the selected laser source is operating properly. If the sourceis not operating properly and cannot be frequency tuned via its heater,the TxPIC chip is rejected and no more testing is done unless there areredundant laser sources built into the TxPIC chip that can besubstituted for the inoperative laser/heater source.

If the desired adjustment in wavelength at 406 is achieved, then thetemperature of the AWG multiplexer can be checked and varied as shown at408 to optimize the matching of the adjustment of the first laserwavelength with the passband of the AWG. The AWG output from the TxPICis checked to determine if the output peak power is optimized at 410 andif not, a readjustment is made. If the output peak power of the AWG isoptimized to the first laser wavelength, the value is set relative tothe temperature, TAWG, for the AWG as indicated at 412, and the valueresults of the adjustment are saved as indicated at 414. If there areadditional laser sources to check as queried at 416, the next lasersource on the TxPIC chip is selected and the process of DFB laser sourcepeak wavelength adjustment and rechecking and adjusting the output peakpower of the AWG is accomplished with the value results saved. Thisprocess is repeated until the last laser source on the TxPIC chip hasbeen adjusted and checked as queried at 416 at which time the savedvalue results of all of these adjustments are stored, as indicated at420, in memory 422. The resulting stored values represent the optimizedtemperature settings for the individual laser sources and their bestmatch to the wavelength grid of the AWG multiplexer. The resultingadjustments of the AWG wavelength grid relative to each of the severallaser sources can be utilized to determine a final temperature value,TAWG, for which the AWG wavelength grid is best matched to all of thewavelengths of the wavelength grid of the DFB laser array of the TxPIC.The stored information at 422 is then used in the field at the time ofsystem installation or during later adjustments to check the dataentries as to the original adjustments made at the factory and make anyreadjustments necessary to optimize the DFB laser source wavelength gridto the AWG wavelength grid in accordance with the stored data for theparticular TxPIC chip.

It is within the scope of this invention to adjust the wavelength gridof the DFB laser sources by checking and adjusting only one or two ofthe DFB laser sources (usually only one) to determine the proper heatervalue for the check laser to be on the desired wavelength grid. Sincethe DFB laser array was preferably fabricated employing SAG, as setforth in U.S. patent application, Ser. No. 10/267,346 supra, tofabricate each laser to proper material composition and bandgap toachieve a desired operational wavelength on the standardized grid, theheater value of the other DFB laser source heaters may also be set tothis same value, based upon the accuracy of the SAG processing of theselaser sources, thereby setting the wavelength grid of the DFB laserarray. Then, the AWG wavelength grid can also be adjusted to thereafterto optimize its match to the DFB array wavelength grid. In followingthis process, it may be necessary to consider readjusting the wavelengthgrid of the DFB laser array.

Reference is now made to FIG. 12B which illustrates a flow chart for theprocedure for testing, at the wafer level, the lasers on the TxPIC chipto insure that the passband of the optical multiplexer match up with thelasers and make adjustments, such as through current or temperatureadjustments at the respective lasers or temperature adjustments at theoptical multiplexer to ensure achieving wavelength grid matching of thelaser sources and the optical multiplexer after the TxPICs are cleavedfrom the InP wafer. Those TxPICs that are not properly grid matched canbe possibly further worked to render them with proper operationalcharacteristics including proper optical multiplexer passbandrequirements. However, those TxPICs that are not in proper functionalorder may be cleaved from the wafer and discarded without any furthertesting. In this manner TxPIC devices can be tested while still in thewafer saving time and resource expense later on in initially wirebonding and die-attaching the chips or subjecting the chips to a testprobe and, in either case, testing them. If the chips can be testedbefore being cleaved from the InP wafer, resources deployed later on aresaved from testing nonfunctional chips. The individual TxPIC chips inthe wafer can be tested using a probe, such as illustrated in U.S.patent application, Ser. No. 10/267,331 filed Oct. 8*, 2002, supra. TheTxPIC chip output is monitored by a photodiode at the output of theoptical multiplexer, such as by means of probe testing one of the PINphotodiodes 155, 157, 159 as shown in FIG. 7. In this manner, withreference again to the TxPIC chip in FIG. 7, the in-wafer testing probeas shown in Ser. No. 10/267,331 be applied to each in-wafer chip withbias probes for DC bias of DFB laser sources, electro-absorptionmodulators 112 as well as DFB laser source drive signals to the DFBlaser sources 108 and test modulation signals to the RF modulation linesto the respective modulators 112 wherein the signal output can bemonitored at PIN photodiodes 155, 157 or 159.

The test procedure set forth in FIG. 12B is as follows. First, the TxPICchips are formed on an InP wafer as indicated at 424 and as set forth inmore detail in the incorporated provisional applications, in particular,U.S. patent application, Ser. No. 10/267,346 supra. The TxPIC die areformed on the InP wafer, including appropriate lithographic proceduresfollowed by contact metallization so that the TxPIC outputs can bechecked via a photodiode as indicated in the previous paragraph. Next, adetermination having been made that all TxPICs have not been tested at426 and, if not, the probe tester is applied to an untested, in-waferTxPIC wherein a test contact is applied to a photodiode (PD) output(428) at the TxPIC AWG output (FIG. 7 and PDs 155, 157 or 159) and aselected DFB laser source is driven by an appropriate applied bias (430)and its corresponding modulator is driven by an applied bias and testmodulation signal (432) and the output from the arrayed waveguidegrating is detected via the AWG output photodiode output via the testingprobe, as indicated at 434. Then, the wavelength grid of the AWG ischecked to see if its passband substantially matches the grid wavelengthgrid of the selected DFB laser source as indicated at 436. If not, thenthe selected DFB laser source is tuned via change in the applied bias orvia applied electrical contact by the testing probe of the laser stripheater, such as heaters 111 shown in FIG. 7 (444). If they are nottunable to properly lie within the standardized grid and within thepassband of the AWG, the chip or die will be noted or marked for reworkor scrap (448) when it is eventually cleaved from the wafer. If theselected DFB laser source is tunable, as indicated at 446, then, furthertesting is accomplished to determine if, in fact, the wavelength grid ofthe selected DFB laser source has substantially changed to match thepassband of the AWG (without, of course, any applied temperature tuningto the AWG since the chip is being tested in-wafer). If yes, then adetermination is made that all of the DFB laser sources on the TxPIChave been properly tested (438) to be within tunable limits of and liein the passband of the AWG. If other DFB laser sources on the samein-wafer chip still need to be tested, the next laser source is selected(440) and the same process of laser operation (430), modulator operation(432) and testing (436) and tuning (444) is achieved until all of thelaser sources on the in-wafer chip have been tested (438) at which pointthe next in-wafer TxPIC is selected (442) for testing by the testingprobe. When all the TxPICs have been tested (426), the TxPICs arecleaved from the wafer, as indicated at 450, and those that have beenindicated as capable of being marked for rework (448) are checked againto set if they are still capable of rework (452). If yes, they arereworked (454). If no, the chip is discarded (456). After reworked chipshave been completed, they may again be tested (442) for wavelength gridbeing within the passband of the AWG in accordance with the flow of FIG.12B. Items that may be reworked on TxPIC chips are, for example,electrical contact shorts, poor contacts or bonding pads, etc.

Matching the modulator design to each different laser source isimportant to achieve a high-performance Tx PIC. The chirp parameter andextinction ratio of a quantum well electro-absorption modulator 462 area function of the change in absorption characteristics and refractiveindex of the modulator with bias voltage. Typically, a voltage bias maybe selected over a range within which the chirp parameter shifts frompositive to negative. It is desirable to have a controlled chirpselected to achieve a best transmission performance appropriate for thechannel wavelength and the fiber dispersion. This can be achieved inseveral ways which may be utilized separately or in conjunction with oneanother. One way to adjust the characteristics of the optical modulatoris to vary the DC bias and swing voltage of the modulator. A second ismethod is to vary the modulator structure along the different elementsof the array. This may be achieved via SAG, multiple regrowthtechniques, or disordering. Alternatively, the modulator may comprisecascaded electro-absorption modulators 458A and 458B as illustrated inFIG. 13. The first electro-absorption modulator 458A is deployed togenerate a periodic string of pulses at a clock frequency (e.g., 10GHz). The pulses may be amplified in an optional semiconductor opticalamplifier (SOA) to enhance the modulated signal amplitude and compensatefor insertion loss of modulator 458A. The second electro-absorptionmodulator 458B may be used to provide a gating function to put data onthe modulated signal from modulator 458A. One benefit of this embodimentis that it permits a RZ format. Additionally, by appropriately settingthe electro-absorption modulator parameters, a controlled chirp may beachieved.

Reference is now made to FIG. 14. FIG. 14 illustrates a single opticalwaveguide or path of a SML in a TxPIC comprising a DFB laser 460, afirst electro-absorption modulator 462, a second electro-absorptionmodulator 466 followed by a spot size converter (SSC) 468 which may alsofunction as a saturable absorber (SA). This tandem modulator structuremay include a semiconductor optical amplifier 464 between the first andsecond modulators 462 and 466. Such a semiconductor structure is formedon an InP substrate upon which are deposited an n-InP layer 470, a Q(InGaAsP or AlInGaAs Quaternary quantum well) quantum well region 472,p-InP layer 474, an optional Q (InGaAsP) layer 476 and a p-InP layer478. On Layer 478 is deposited a contact layer (not shown comprising p-InGaAs. SSC 468 may include a taper 469 to maintain single modeconsistency for input to an optical multiplexer (not shown) on the sameTxPIC chip. See, also the article of Beck Mason et a. entitled, “40-GB/sTandem Electroabsorption Modulator”, IEEE Photonics Technology Letters,Vol. 14(1), pp. 27-29, January, 2002, which article is incorporatedherein by its reference. Note that the other forms of this structure arealso viable, included buried heterostructure forms as well as buriedrib-loaded slab structures.

The tandem or multi-segment EA modulators 462 and 466 are designed tooperate with NRZ pulses wherein modulator 466 includes an unpumped orpartially pumped region 468 at the exit port of the modulator thatfunctions as a saturable absorber. The saturable absorber can be reversebiased to provide more stable operating characteristics during highspeed modulation. This is because absorber region 468 providesnon-linear amplitude transmission characteristics which favor highamplitude modulated signals and, therefore, increases the extinctionratio of the channel modulator 462. This absorber can be positionedanywhere downstream in the optical waveguide path from modulator 466before the optical multiplexer.

Referring now to FIG. 15, a two-section cooler 480 (T₁ and T₂),comprising sections 480A and 480B, may be deployed instead of a singlecooler 18 illustrated in FIG. 3. The two-section cooler 480 provides forseparate adjust the temperature of AWG section 486 and DFB laser sourcesection 484 of TxPIC 482. To be noted is that TxPIC 482 is comparativelylarge, i.e., has an area of several square millimeters or more. Atemperature gradient may be formed on TxPIC 482, i.e., differenttemperature zones may be formed on the TxPIC substrate although therewill be a temperature gradient between the different temperature zones.A two-section heat sink 480 may be configured to provide separatetemperature control for different portions of TxPIC submount 487 asshown in FIG. 15. The two-section heat sink may, for example, have afirst portion 480A separated from a second portion 480B by a thinthermally insulating layer 490 to permit two separate temperaturecontrollers (not shown) to independently regulate the temperature ofeach portion of the heat sink 480. If desired, a notch 492 or otherthermal barrier may be formed into submount 487 to independently controlheat transfer between different portions of submount 487. The size andarrangement of the two sections of heat sink 480 may, for example, beselected to form a first temperature zone 496 for AWG 486 and a secondtemperature zone 494 for the optical signal sources. Components of eachoptical signal source that have a response that is strongly dependentupon temperature, such as the DFB laser sources 484, are preferablylocated within second temperature zone 494. Components that areinsensitive to small variations in temperature, such as., passivewaveguides and/or EAM modulators 488, may reside in a resultingtemperature gradient region between the two temperature zones 494 and496.

Moreover, to enhance the separation of such components, passivewaveguide section 488 coupling each optical signal source to AWG 486 maybe extended in length to sufficiently space apart the AWG fromtemperature sensitive, semiconductor modulator/laser (SML) components,although this entails the use of more chip area. Alternatively, as shownin FIG. 16, the coolers 480 (T₁ and T₂) may be confined more to TxPICregions requiring temperature control, i.e., DFB laser sources 484relative to TEC cooler 480A and AWG 486 relative to TEC cooler 480B werethe thermally insulating region 491 separating temperature zones 494 and496 is much larger compared to layer 490 in the embodiment in FIG. 15.This larger isolation of zones 494 and 496 provides for a greater degreein control of the overall temperature of the DFB laser sources 484independent of the temperature control of AWG 486.

Note that the approach of FIGS. 15-16 may be further extended to provideper channel coolers for each of the laser sources as well as optionallyan additional cooler for the AWG multiplexer. This is illustrated inFIG. 24 that shows: an array 736 of micro TECs 736(1) . . . 736(N) forindividually controlling each laser source 730(1) . . . 730(N) in laserarray 730(N), a patterned submount 732, preferably made from AlN, and aTx PIC chip 10 positioned on submount 734 again, laser sources 730(N)can be either DFB laser sources of DBR laser sources. A micro TEC array736 may be defined as an array of TECs 736(1) . . . 736(N) with aspacing greater than 1 mm and preferably greater than 300-500 μm perchannel. In order to optimize the thermal isolation between lasercomponents 730(1) . . . 730(N), an array of thermal chokes 742 may beformed in submount 734 as shown in FIG. 24. These thermal chokes 742 arelocated between formed thermal channels 735 and are comprised of amaterial that has significantly lower thermal conductivity than thesurrounding submount material. A preferred embodiment is to have thermalchokes 742 be comprised of an air gap. Furthermore, the thermal couplingto each individual laser source 730(1) . . . 730(N) may be improved byproviding a thermal shunt 744 formed in vias on InP substrate 734. Athermal shunt 744 is respectively aligned with each laser source 730(1). . . 730(N) and is filled with a material, e.g., Au, which hassignificantly higher thermal conductivity than the surrounding InPsubstrate bulk. In the ideal case, the via will reach up to the bottomor near the bottom of each laser source 730(N), but will not makeelectrical contact with the laser source 730(N). In addition to thelaser source array 730, an individual TEC cooler may be provided in theAWG region as illustrated in FIGS. 15 or 16. The embodiment of FIG. 24is preferred in that Tx PIC chip 10 is solely temperature-controlledwith per channel thermal micro-TEC elements 736(1) . . . 736(N). Eachmicro-element 736(N), which is only a couple of one hundred micronswide, e.g., 200 to 300 mm wide, individually control each channel 735 toa different temperature and, correspondingly hold each laser source730(N) to a desired operating temperature. As a result, the junctiontemperature of the DFB lasers 730(N) is reduced and the tuning range ofeach laser source 730(N) is broadened. If desired or required, thetuning range of each laser source 730(N) may be further extended byproviding a micro-tuning element (e.g., heater or current tuning) inaddition to each micro TEC element 736(N). The laser sources 730(N) maybe DFB or DBR lasers.

Referring again to FIGS. 15 and 16, note TxPIC chip 482 may be alsomounted junction-down so that the junction region of its active, SMLdevices on the TxPIC are in closer proximity to heatsink 494. In ajunction-up embodiment, TxPIC 482 may reside on a common temperatureregulated heat sink, such as a TEC. As previously discussed, AWG 486 mayhave its own integrated local heater for controlling the temperature ofAWG 486 independently of other components of the TxPIC. The local heatermay comprise a microstrip thin film heater, such as a thin film ofplatinum, NiCr, or TaN, or other elements as commonly known in the art,patterned as a resistive heater element over the top of AWG 486. Theheater may be placed on the top surface of AWG 486 or placed proximateto its sides. Alternatively, an electrically resistive element may beintegrated into the semiconductor materials underlying AWG 486 forresistively heating it. Such a resistive element may be patterned suchas by varying the electrical resistivity of a InP heater layer beneaththe AWG as illustrated in FIG. 17. In FIG. 17, a cross-sectionalrepresentation of AWG 486 is illustrated comprising, as an example, aInP substrate 500, a n⁺-InP layer 502, n⁺⁺-InP heater layer 504, Q layer506 (which is the grating layer with a formed grating therein in the DFBlaser source portion of the TxPIC), InP layer 508, Q (InGaAsP orAlInGaAs) multiple quantum well region 510, InP layer 512, optional Qrib, ridge waveguide layer 514, and NID (Non-intentionally doped) InPclad layer 516. Note in this cross-sectional view that heater layer 504can be biased to adjust the temperature ambient of the overlying AWGfree space regions and gratings formed in Q layer 510. Note that otherembodiments are also feasible, including isolating a lower doped n-InPchannel with semi-insulating layers (e.g., of InP) or alternativelyutilizing InAlGaAs materials for the heater or current isolating layers.

In another approach, which has already been previously explainedrelative to FIG. 3, the TxPIC 482 may be mounted to a common cooler(e.g., a TEC) and the temperature of the cooler is selected to tune therefractive index of the AWG to achieve a desired passband response ofthe AWG. In this embodiment, the wavelength of each semiconductor laseris adjusted (e.g., by varying its drive current or by tuning its localtemperature by its local thin film heater) and the wavelength grid ofthe AWG is tuned, via the TEC, to match the wavelength grid of the DFBlaser sources.

In addition to temperature tuning of the refractive index of the AWG,the refractive index of the AWG to accomplish grid tuning may be variedusing electrical methods, such as by applying a voltage or a current tothe region of the AWG. For example, if the AWG is composed of PINsemiconductor layers similar to those of passive waveguide sectionsdeployed in Mach Zehnder modulators, a reverse bias voltage may beapplied to vary the refractive index of the AWG. By applying a forwardbias, the charge density may be varied in AWG layers, also changing itsrelative refractive index. An electrically tunable AWG has the advantagethat it may be used in a junction down configuration with the TxPIC chipflip-chip mounted to a common heat-sink. Note that it is preferable thatfor an electrically tuned AWG, only a limited portion of the AWG betuned as the elements required to facilitate tuning (doped junctions)increase the loss of the device.

Reference is now made to FIG. 18 which illustrates in cross-section theDFB laser source section from a TxPIC chip. The device shown comprisesan Fe doped InP substrate 620 upon which is sequentially deposited,employing MOCVD, n-InP buffer layer 622, n⁺⁺-InP heater layer 624, InPspace layer 626, Fe doped InP buffer layer 628, InP space layer 630,n-InP contact layer 632, Q (InGaAsP or AlInGaAs) DFB grating layer 634,InP space layer 636 which also renders grating layer 632 substantiallyflat, Q (InGaAsP or AlInGaAs) multiple quantum well region 638, an InPlayer 640, optional Q rib layer 642 forming part of the ridge waveguidestructure comprising layers 642, 644 and 646, p-InP layer 644 andp⁺⁺-InGaAs contact layer 646. In the case here, n-side contact layer 632is utilized for contacting to the DFB laser source. The p-side contactis, of course at layer 646. Thus, the current path and applied biasacross the DFB laser source is between n and p contact layers 632 and646 via the intervening layers. This applied bias does not pass throughinsulating buffer layer 626. Thus, a current path can be establishedthrough heater layer 624 With such an n-side contact layer in place, aFe doped buffer layer can then be formed prior to the n-side contactlayer and the n⁺-InP heater layer formed below Fe doped buffer layer. Asa result, an electrical path separation for pumping of the DFB lasersource is established from that for pumping heater layer 624. Note thatin connection with the placement of heater layer 624 in FIG. 18, theheater layer and the grating layer 634 may be positioned on the p-sideof the DFB laser structure, i.e., above active region 638. However, theDFB laser fabrication would be more difficult to achieve in such a case.The tuning occurs via increasing the temperature of the heater layerwhich then varies the modal index of the DFB and hence the emissionwavelength of the source.

While the invention has been described in conjunction with severalspecific embodiments, it will be evident to those skilled in the artthat many further alternatives, modifications and variations will beapparent in light of the foregoing description. For example, in theforegoing described TxPIC embodiments, mention is made that all of theon-chip generated channel signals provided from electro-opticmodulator/laser (EML) sets or modulated sources are provided as anactive output to the on-chip optical multiplexer. However, it is withinthe scope of this invention that some of the modulated sources may notbe operated so as to function later on to increase the channel capacityof the TxPIC or to later replace inoperative modulated source signalchannels. Thus, the invention described herein is intended to embraceall such alternatives, modifications, applications and variations as mayfall within the spirit and scope of the appended claims.

1. A monolithic photonic integrated circuit (PIC) chip comprising: anarray of modulated sources formed on the PIC chip and having differentemission wavelengths according to a modulated source wavelength grid andproviding modulated channel signal outputs; a plurality of firstwavelength tuning elements, one associated with each of the modulatedsources; an wavelength selective combiner integrated on the PIC chip andhaving a given optimum wavelength passband response and providing acombined channel signal WDM output; the modulated signal outputsoptically coupled to one or more inputs of the wavelength selectivemultiplexer; a WDM channel signal output from the wavelength selectivecombiner that is provided to a chip output; the modulated sourcewavelength tuning elements to tune the emission wavelength of therespective modulated sources to vary the modulated source wavelengthgrid to approximate or to be chirped to the given optimum wavelengthpassband of the wavelength selective combiner.
 2. The monolithicphotonic integrated circuit (PIC) chip of claim 1 wherein the firstwavelength tuning elements are temperature changing elements, currentand voltage changing elements or bandgap changing elements.
 3. Themonolithic photonic integrated circuit (PIC) chip of claim 1 wherein thefirst wavelength tuning elements are temperature changing elementscomprising heater elements.
 4. The monolithic photonic integratedcircuit (PIC) chip of claim 3 wherein the heater elements aremicro-strip layers of TiWN, W, Pt/Ti, Pt, TaN or NiCr.
 5. The monolithicphotonic integrated circuit (PIC) chip of claim 3 wherein the heaterelements are embedded micro-TEC elements each in thermal associationwith a modulated source.
 6. The monolithic photonic integrated circuit(PIC) chip of claim 1 wherein the modulated sources comprise DFB or DBRsemiconductor lasers.
 7. The monolithic photonic integrated circuit(PIC) chip of claim 1 wherein the wavelength selective combinercomprises an Echelle grating or an array waveguide grating (AWG).
 8. Themonolithic photonic integrated circuit (PIC) chip of claim 1 wherein themodulated sources are DFB semiconductor lasers and the wavelengthselective combiner is a wavelength selective combiner is an arraywaveguide grating (AWG).
 9. The monolithic photonic integrated circuit(PIC) chip of claim 1 wherein the standardized grid is a G.692 ITU, orother symmetric or asymmetric wavelength grid.
 10. The monolithicphotonic integrated circuit (PIC) chip of claim 1 wherein the modulatedsources each comprise a semiconductor laser operated cw at itsrespective wavelength grid emission wavelength, and an integratedelectro-optic modulator is optically coupled between the semiconductorlaser and the wavelength selective combiner to provide the modulatedsignal outputs.
 11. The monolithic photonic integrated circuit (PIC)chip of claim 10 wherein the semiconductor lasers are DFB lasers, thewavelength selective combiner is an arrayed waveguide grating (AWG) andthe electro-optic modulators are electro-absorption modulators (EAMs) orMach-Zehnder modulators (MZMs).
 12. The monolithic photonic integratedcircuit (PIC) chip of claim 1 wherein the modulated sources comprisedirectly modulated semiconductor lasers to provide the signal outputs.13. The monolithic photonic integrated circuit (PIC) chip of claim 12wherein the semiconductor lasers are DFB lasers or DBR lasers.
 14. Themonolithic photonic integrated circuit (PIC) chip of claim 1 furthercomprising: a wavelength monitoring unit optically coupled to sample thecombined channel signal WDM output; a wavelength control system coupledto the respective first wavelength tuning elements and to saidwavelength monitoring unit to receive the sampled combined channelsignal WDM output; the wavelength control system providing outputsignals to the first wavelength tuning elements to adjust the respectiveemission wavelengths of the modulated sources to approximate or to bechirped to a standardized wavelength grid.
 15. The monolithic photonicintegrated circuit (PIC) chip of claim 14 wherein the first wavelengthtuning elements are temperature changing elements, current and voltagechanging elements or bandgap changing elements.
 16. The monolithicphotonic integrated circuit (PIC) chip of claim 14 further comprising asecond wavelength tuning element for tuning said wavelength selectivecombiner to vary its wavelength grid passband response to be optimizedto the standardized wavelength grid.
 17. The monolithic photonicintegrated circuit (PIC) chip of claim 16 wherein said the secondwavelength tuning element is a temperature changing element, an appliedbias current element or a bandgap changing element.
 18. The monolithicphotonic integrated circuit (PIC) chip of claim 1 further comprises asecond wavelength tuning element for tuning the wavelength selectivecombiner to correspondingly change its wavelength grid passband responseto be optimized to a standardized wavelength grid.
 19. The monolithicphotonic integrated circuit (PIC) chip of claim 1 wherein the emissionwavelengths of said modulates sources are tuned be within the acceptabletolerance of ±10% of a wavelength channel spacing of the modulatedsources.
 20. The monolithic photonic integrated circuit (PIC) chip ofclaim 1 further comprising: a wavelength control system having a memory;a plurality of first predefined wavelength tuning settings in saidmemory for the modulated sources indicative of predetermined emissionwavelength settings for each modulated source to a standardizedwavelength grid; a plurality of second predefined wavelength tuningsettings in said memory for the wavelength selective combiner indicativeof the predetermined operating passband response for the opticalcombiner optimized to the standardized wavelength grid; the wavelengthcontrol system tuning the wavelengths of the modulated sources basedupon currently monitored emission wavelengths of the modulated sourcesto the first predefined wavelength tuning settings; and the wavelengthcontrol system further tuning the wavelength grid of the wavelengthselective combiner based upon a currently monitored emission wavelengthgrid relative to the second predefined wavelength tuning settings. 21.The monolithic photonic integrated circuit (PIC) chip of claim 20wherein the first predefined wavelength tuning settings includespredetermined settings of modulated source bias current settings, heatersettings for heaters associated with each of said modulated sources, andmodulation bias nominal settings and modulation delta current swingsettings.
 22. The monolithic photonic integrated circuit (PIC) chip ofclaim 20 wherein the wavelength control system further tunes theemission wavelengths of at least some of the modulated sources to anemission wavelength on the standardized wavelength grid which aredifferent from the first predefined wavelength tuning settings in saidmemory.
 23. The monolithic photonic integrated circuit (PIC) chip ofclaim 22 wherein the wavelength control system further tunes theoperating passband response of the wavelength selective combiner to theadjusted emission wavelength grid of the modulated sources which isdifferent from the second predefined wavelength tuning settings in saidmemory.
 24. The monolithic photonic integrated circuit (PIC) chip ofclaim 1 further comprising a second wavelength tuning element to tunethe combiner wavelength passband response to approximate the modulationsource wavelength grid.
 25. The monolithic photonic integrated circuit(PIC) chip of claim 1 further comprising a plurality of signal channelsintegrated in the chip, one each for each of the modulated sources, themodulated sources at one end of the channels and the other end of thechannels coupled to combiner inputs; each of said channels furtherincluding a first photodetector at the one end preceding the modulatedsources and a second photodetector between the modulated source and anoptical combiner input.
 26. The monolithic photonic integrated circuit(PIC) chip of claim 1 further comprising a plurality of signal channelsintegrated in the chip, one each for each of the modulated sources, themodulated sources at one end of the channels and the other end of thechannels coupled to combiner inputs; each of said channels furtherincluding a photodetector between the modulated source and a combinerinput to aid in the calibration of the bias current swing and duty cyclecontrol of a respective modulated source.
 27. The monolithic photonicintegrated circuit (PIC) chip of claim 1 further comprising a pluralityof signal channels integrated in the chip, one each for each of themodulated sources, the modulated sources at one end of the channels andthe other end of the channels coupled to combiner inputs; each of thechannels further including a semiconductor optical amplifier (SOA)between the modulated source and a combiner input to provide gain to themodulated source signal outputs.
 28. The monolithic photonic integratedcircuit (PIC) chip of claim 27 further comprising a photodetectorbetween the SOA and the optical combiner input in each signal channelemployed to monitor modulated signal output power from the SOA.
 29. Themonolithic photonic integrated circuit (PIC) chip of claim 1 furthercomprising a plurality of signal channels integrated in the chip, oneeach for each of the modulated sources, the modulated sources at one endof the channels and the other end of the channels coupled to combinerinputs; each of the channels further including a photodetector betweenthe modulated source and a combiner input to function as saturableabsorber that is applied to the modulated signal output from arespective modulated source.
 30. The monolithic photonic integratedcircuit (PIC) chip of claim 29 further comprising bias means to operatesaid saturable absorbers to provide a net effect of lower absorption ofthe signal output of the modulated source during its modulated ON-stateand a higher absorption of the signal output of the modulated sourceduring its modulated OFF-state to enhance the modulated sourceextinction ratio.
 31. The monolithic photonic integrated circuit (PIC)chip of claim 29 wherein the photodetectors double as a monitor ofoutput power of the respective modulated source signal output and thesaturable absorber enhances the modulated source extinction ratio. 32.The monolithic photonic integrated circuit (PIC) chip of claim 1 furthercomprising a plurality of signal channels integrated in the chip, oneeach for each of the modulated sources, the modulated sources at one endof the channels and the other end of the channels coupled to a combinerinputs; each of said channels further including a photodetector betweenthe modulated source and the combiner input; and means to modulate thephotodetector to encode modulated information on the signal output fromthe modulated sources.
 33. The monolithic photonic integrated circuit(PIC) chip of claim 32 wherein said modulated information is additionalinformation for transmission in an optical transmission network.
 34. Themonolithic photonic integrated circuit (PIC) chip of claim 32 whereinthe modulated information is for signal channel identification in anoptical transmission network or utilized for wavelength stabilization ofthe modulated sources.
 35. The monolithic photonic integrated circuit(PIC) chip of claim 32 wherein the photodetector modulation is a lowfrequency tone modulation.
 36. The monolithic photonic integratedcircuit (PIC) chip of claim 1 further comprising a plurality of signalchannels integrated in the chip, one each for each of the modulatedsources, the modulated sources at one end of the channels and the otherend of the channels coupled to combiner inputs; each of the channelsfurther including a photodetector between the modulated source and thecombiner input; each of the channels further including an integratedfilter before the photodetector to spectrally narrow the respectivemodulated signal output to a desired bandwidth.
 37. The monolithicphotonic integrated circuit (PIC) chip of claim 1 further comprising aplurality of signal channels integrated in the chip, one each for eachof the modulated sources, the modulated sources at one end of thechannels and the other end of the channels coupled to combiner inputs;each of the channels further including a photodetector between themodulated source and the combiner input employed at times to be biasedto monitor power of the channel modulated signal output and other timesto be biased or remain unbiased to render the photodetector transparentto the channel modulated signal output.
 38. The monolithic photonicintegrated circuit (PIC) chip of claim 1 further comprising a pluralityof signal channels integrated in the chip, one each for each of themodulated sources, the modulated sources at one end of the channels andthe other end of the channels coupled to combiner inputs; each of thechannels further including an integrated mode converter between themodulated source and the combiner input to insure that the modulatedsignal outputs from the modulated sources are of single mode uponentering the combiner.
 39. The monolithic photonic integrated circuit(PIC) chip of claim 1 further comprising a plurality of signal channelsintegrated in the chip, one each for each of the modulated sources, saidmodulated sources at one end of the channels and the other end of thechannels coupled to optical combiner inputs; an optical amplifier at theoutput of the wavelength selective combiner.
 40. The monolithic photonicintegrated circuit (PIC) chip of claim 39 wherein said optical amplifieris a semiconductor optical amplifier (SOA), a gain-clamped semiconductoroptical amplifier, or a rare earth doped amplifier.
 41. The monolithicphotonic integrated circuit (PIC) chip of claim 39 wherein said opticalamplifier is erbium doped amplifier (EDFA).
 42. A method of tuningoptical components integrated on a monolithic semiconductor chipcomprising the steps of: providing a plurality of first opticalcomponents integrated on the chip with each fabricated to approximate anemission wavelength along a given wavelength grid and together forming afirst optical component wavelength grid; providing a second opticalcomponent integrated on the chip with and optically coupled to the groupof first optical components and having a second optical componentwavelength grid approximating the given wavelength grid but where atleast one emission peak along the second optical component wavelengthgrid is within an acceptable wavelength tolerance range of a particularfirst optical component of the first optical component wavelength gridbut not the same as a corresponding emission wavelength of a particularfirst optical component; and tuning the corresponding emissionwavelength of the particular first optical component to have awavelength response approximating the at least one emission peak of thesecond optical component wavelength grid.
 43. The method of tuningoptical components of claim 42 comprising the further step of:thereafter tuning the first optical component wavelength grid to enhanceits approximation of the second optical component wavelength grid. 44.The method of tuning optical components of claim 42 comprising thefurther step of: thereafter tuning the second optical componentwavelength grid to better approximate of the first optical componentwavelength grid.
 45. A method of tuning optical components integrated ona monolithic semiconductor chip comprising the steps of: providing on asingle semiconductor chip a plurality of modulated sources eachfabricated to approximate a different emission wavelength along a givenwavelength grid, the modulated sources providing optical signal outputsthat together form a first wavelength grid; providing on the same singlesemiconductor chip a wavelength selective combiner optical that hassecond wavelength grid and is coupled to receive the optical signaloutputs from the modulated sources; and tuning the first wavelength gridto better approximate the second wavelength grid or tuning the secondwavelength grid to better approximate the first wavelength grid.
 46. Themethod of tuning optical components of claim 45 wherein the step oftuning the second wavelength grid is carried out by tuning the passbandresponse of the wavelength selective combiner.
 47. The method of tuningoptical components of claim 45 where the modulated sources are eithermodulated laser diodes or continuous wave (cw) laser diodes respectivelycoupled to external electro-optic modulators.
 48. The method of tuningoptical components of claim 47 where the laser diodes are DFB laserdiodes or DBR laser diodes.
 49. The method of tuning optical componentsof claim 45 where the wavelength selective combiner is an arrayedwaveguide grating (AWG) or Echelle grating.
 50. A method of wavelengthtuning a plurality of integrated modulated sources having differentemission wavelengths together forming a given wavelength grid and anintegrated wavelength selective combiner having a given wavelengthpassband response on a single substrate, comprising: tuning each of theemission wavelengths of the modulated sources to form a wavelength gridto approximate a standardized wavelength grid; and tuning the wavelengthselective combiner passband response to approximate the standardizedwavelength grid.
 51. The method of claim 50 further comprising: tuningthe wavelength selective combiner passband response to approximate themodulated source wavelength grid.
 52. The method of claim 50 furthercomprising: tuning the emission wavelengths of the of the modulatedsources to approximate the the wavelength selective combiner passbandresponse.
 53. A method of wavelength tuning a plurality of integratedmodulated sources having different emission wavelengths together forminga given wavelength grid and an integrated wavelength selective combinerhaving a given wavelength passband response on a single substrate,comprising: initially tuning each of the emission wavelengths of themodulated sources to a set of first predefined wavelength tuningsettings; and initially tuning the wavelength selective combinerpassband response to second predefined wavelength tuning setting. 54.The method of claim 53 further comprising: further tuning each of theemission wavelengths of the modulated sources to form a wavelength gridthat better approximates a standardized wavelength grid.
 55. The methodof claim 53 further comprising: further tuning the wavelength selectivecombiner passband response that better approximates a standardizedwavelength grid.